SiC Wafer Ubwato / Umunara

Ibicuruzwa birambuye

IbicuruzwaDKwiyandikisha

Silicon carbide Wafer Ubwato bukoreshwa cyane nka wafer mugihe cyo gukwirakwiza ubushyuhe bwinshi.

Ibyiza:

Kurwanya ubushyuhe bwinshi:gukoresha bisanzwe kuri 1800 ℃

Amashanyarazi menshi:bihwanye nibikoresho bya grafite

Gukomera cyane:gukomera kumwanya wa kabiri nyuma ya diyama, nitride ya boron

Kurwanya ruswa:acide ikomeye na alkali nta ruswa ifite kuri yo, kurwanya ruswa biruta karbide ya tungsten na alumina

Uburemere bworoshye:ubucucike buke, hafi ya aluminium

Nta guhindura ibintu: coefficient nkeya yo kwagura ubushyuhe

Kurwanya ubushyuhe:irashobora kwihanganira impinduka zikabije zubushyuhe, kurwanya ihungabana ryumuriro, kandi ifite imikorere ihamye

Ibintu bifatika bya SiC

Umutungo	Agaciro	Uburyo
Ubucucike	3.21 g / cc	Kurohama-kureremba hamwe nubunini
Ubushyuhe bwihariye	0,66 J / g ° K.	Flash flash
Imbaraga zoroshye	450 MPa 560 MPa	Ingingo 4 yunamye, RT4 igoramye, 1300 °
Gukomera kuvunika	2.94 MPa m1 / 2	Microindentation
Gukomera	2800	Vicker, umutwaro wa 500g
Modulus Yumusore Modulus	450 GPa430 GPa	4 pt yunamye, RT4 yunamye, 1300 ° C.
Ingano y'ibinyampeke	2 - 10 µm	SEM