CVD Silicon Carbide Yashushanyije Impeta ya Graphite

CVD Silicon Carbide Yashushanyije Impeta Yerekana Ishusho

Ibisobanuro bigufi:

VET Ingufu za silicon karbide yometse kuri grafite impeta nigicuruzwa cyiza cyane cyagenewe gutanga imikorere ihamye kandi yizewe mugihe kinini.Ifite ubushyuhe bwiza cyane hamwe nubushyuhe bwumuriro, ubuziranenge bwinshi, kurwanya isuri, bigatuma biba igisubizo cyiza kubisabwa gutunganya wafer.

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Ibicuruzwa birambuye

Ibicuruzwa

Ibintu bisanzwe bya Base Graphite Ibikoresho:

Ubucucike bugaragara:	1,85 g / cm3
Kurwanya amashanyarazi:	11 μΩm
Icyerekezo cyoroshye:	49 MPa (500kgf / cm2)
Gukomera ku nkombe:	58
Ivu:	<5ppm
Amashanyarazi:	116 W / mK (100 kcal / mhr- ℃)

Dutanga susceptors zitandukanye hamwe nibice bya grafite kubintu byose bigezweho.Ibicuruzwa byacu birimo ibishishwa bya barriel kubice bya LPE, ibibyimba bya pancake kubice bya LPE, CSD, na Gemini, hamwe na wafer imwe ya wafer kubikoresho byakoreshejwe na ASM.

Muguhuza ubufatanye bukomeye hamwe na OEM iyobora, ubuhanga bwibikoresho no gukora ubumenyi-buryo, vet itanga igishushanyo cyiza kubyo usaba.

Ingufu za VET ni iuruganda nyarwo rukora ibicuruzwa bya grafite na silicon karbide hamwe na CVD,irashobora gutangazitandukanyeibice byabigenewe bya semiconductor ninganda zifotora. Our tekinike tekinike iva mubigo byubushakashatsi byo murugo, birashobora gutanga ibisubizo byumwuga byinshikuri wewe.

Fibiryo byibicuruzwa byacu:

1. Ubushyuhe bwo hejuru bwa okiside igera kuri 1700℃.
2. Isuku ryinshi kandiuburinganire bwumuriro
3. Kurwanya ruswa nziza: aside, alkali, umunyu na reagent.
4. Gukomera cyane, hejuru yuzuye, ibice byiza.
5. Kuramba kuramba kandi biramba

CVD SiC薄膜基本物理性能 Ibyingenzi bifatika bya CVD SiCgutwikira
性质 / Umutungo	典型数值 / Agaciro gasanzwe
晶体结构 / Imiterere ya Crystal	FCC β icyiciro多晶，主要为（111）取向
密度 Ubucucike	3.21 g / cm³
硬度 / Gukomera	2500 维氏硬度（500g umutwaro）
晶粒大小 / Ibinyampeke SiZe	2 ~ 10 mm
纯度 / Ubuziranenge bwa Shimi	99.99995%
热容 / Ubushyuhe	640 J · kg^-1· K.^-1
升华温度 / Ubushyuhe bwo hejuru	2700 ℃
抗弯强度 / Imbaraga zoroshye	415 MPa RT amanota 4
杨氏模量 / Modulus	430 Gpa 4pt yunamye, 1300 ℃
导热系数 / ThermalImyitwarire	300W · m^-1· K.^-1
热膨胀系数 Kwagura Ubushyuhe (CTE)	4.5 × 10^-6K^-1