sic coating Silicon carbide coating SiC coating ya Graphite substrate ya Semiconductor

SiC ifite imiterere myiza yumubiri nubumashini, nko gushonga cyane, gukomera cyane, kurwanya ruswa no kurwanya okiside. Cyane cyane murwego rwa 1800-2000 ℃, SiC ifite kwihanganira gukuraho neza. Kubwibyo, ifite ibyifuzo byinshi byo gukoresha mu kirere, ibikoresho byintwaro nizindi nzego. Ariko, SiC ubwayo ntishobora gukoreshwa nkukoimiterereibikoresho,uburyo bwo gutwikira rero busanzwe bukoreshwa mugukoresha imyambarire yayo no kurwanya ablce.

Carbide(SIC) ibikoresho bya semiconductor nigisekuru cya gatatu seibikoresho bya miconductor byatejwe imbere nyuma yicyiciro cya mbere cyibikoresho bya semiconductor (Si, GE) hamwe nigisekuru cya kabiri cyuzuzanya cya semiconductor (GaAs, icyuho, InP, nibindi). Nkibikoresho bigari bya semiconductor, karbide ya silicon ifite ibiranga ubugari bunini bwikigero kinini, imbaraga zo kumeneka mwinshi, ubushyuhe bwinshi bwumuriro, umuvuduko mwinshi wubwikorezi bwihuta, umuvuduko muto wa dielectric uhoraho, kurwanya imirasire ikomeye hamwe n’imiti ihamye. Irashobora gukoreshwa mugukora ibikoresho bitandukanye byumuvuduko mwinshi kandi ufite ingufu nyinshi hamwe nubushyuhe bwo hejuru kandi birashobora gukoreshwa mugihe ibikoresho bya silicon bidafite ubushobozi, Cyangwa bikabyara ingaruka ibikoresho bya silicon bigoye kubyara mubikorwa rusange.

Porogaramu nyamukuru: ikoreshwa mugukata insinga za silicon ya monocrystalline 3-12, silikoni polycrystalline, potasiyumu arsenide, kristal kristal, nibindi.Byakoreshejwe muriigice cya kabiri, inkoni yumurabyo, ibintu byumuzunguruko, ikoreshwa ryubushyuhe bwo hejuru, disiketi ya ultraviolet, ibikoresho byubatswe, astronomie, feri ya disiki, clutch, filteri ya mazutu ya filozofiya, pyrometer ya firimu, firime ceramic, ibikoresho byo gukata, ibikoresho byo gushyushya, lisansi ya kirimbuzi, imitako, ibyuma, ibikoresho birinda, inkunga ya catalizator hamwe nizindi nzego