6 Inch Semi Irinda SiC Wafer

Ibisobanuro bigufi:

VET Ingufu 6 santimetero imwe ya silicon karbide (SiC) wafer nicyiza cyo mu rwego rwo hejuru cyiza cyane muburyo butandukanye bwo gukoresha ibikoresho bya elegitoroniki. Ingufu za VET zikoresha tekinoroji yo gukura kugirango itange waferi ya SiC ifite ubuziranenge budasanzwe bwa kirisiti, ubucucike buke, kandi birwanya cyane.


Ibicuruzwa birambuye

Ibicuruzwa

6 Inch Semi Ihinduranya SiC Wafer iva muri VET Ingufu nigisubizo cyambere kubikorwa byingufu nyinshi kandi zikoresha inshuro nyinshi, bitanga ubushyuhe bwumuriro nubushakashatsi bwamashanyarazi. Izi waferi zikoresha igice cya ngombwa ni ngombwa mugutezimbere ibikoresho nka amplifier ya RF, amashanyarazi, nibindi bikoresho bikoresha ingufu nyinshi. Ingufu za VET zitanga ubuziranenge nuburyo bukora neza, bigatuma iyi wafer iba nziza muburyo butandukanye bwo guhimba igice cya kabiri.

Usibye imitungo yabo idasanzwe yo kubika, aba wafers ba SiC bahujwe nibikoresho bitandukanye birimo Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, na Epi Wafer, bigatuma bihinduka muburyo butandukanye bwo gukora. Byongeye kandi, ibikoresho bigezweho nka Gallium Oxide Ga2O3 na AlN Wafer birashobora gukoreshwa bifatanije niyi waferi ya SiC, bigatanga nuburyo bworoshye mubikoresho bya elegitoroniki bifite ingufu nyinshi. Wafers yagenewe guhuza hamwe na sisitemu isanzwe ikora inganda nka sisitemu ya Cassette, bigatuma byoroha gukoreshwa mubikorwa rusange.

VET Ingufu zitanga portfolio yuzuye ya semiconductor substrates, harimo Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, na AlN Wafer. Ibicuruzwa byacu bitandukanye bitandukanye byujuje ibyifuzo bya elegitoroniki zitandukanye, kuva amashanyarazi ya elegitoronike kugeza kuri RF na optoelectronics.

Ibice 6 bya santimetero imwe ya SiC wafer itanga ibyiza byinshi:
Umuvuduko mwinshi wo kumeneka: Umuyoboro mugari wa SiC utuma imbaraga zo kumeneka hejuru, zitanga ibikoresho byinshi kandi byoroshye.
Igikorwa cy'ubushyuhe bwo hejuru: SiC nziza cyane yubushuhe ituma imikorere yubushyuhe bwo hejuru, itezimbere ibikoresho.
Kurwanya ubukana buke: Ibikoresho bya SiC byerekana hasi-birwanya, kugabanya gutakaza ingufu no kuzamura ingufu.

VET Ingufu zitanga wafers yihariye ya SiC kugirango ihuze ibyifuzo byawe byihariye, harimo ubunini butandukanye, urwego rwa doping, hamwe nubuso burangirira. Itsinda ryinzobere zacu ritanga inkunga ya tekiniki na serivisi nyuma yo kugurisha kugirango tumenye neza.

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KUBONA UMWIHARIKO

* n-Pm = n-ubwoko bwa Pm-Urwego, n-Ps = n-ubwoko bwa Ps-Urwego, Sl = Semi-lnsulating

Ingingo

8-Inch

6-Inch

4-Inch

nP

n-Pm

n-Zab

SI

SI

TTV (GBIR)

≤6um

≤6um

Umuheto (GF3YFCD) -Agaciro keza

≤15μm

≤15μm

≤25μm

≤15μm

Intambara (GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV (SBIR) -10mmx10mm

<2 mm

Wafer Edge

Beveling

BURUNDU

* n-Pm = n-ubwoko bwa Pm-Urwego, n-Ps = n-ubwoko bwa Ps-Urwego, Sl = Semi-lnsulating

Ingingo

8-Inch

6-Inch

4-Inch

nP

n-Pm

n-Zab

SI

SI

Kurangiza

Impande ebyiri Optical Polonye, ​​Si- Isura CMP

Ubuso

(10um x 10um) Si-FaceRa≤0.2nm
C-Isura Ra≤ 0.5nm

(5umx5um) Si-Isura Ra≤0.2nm
C-Isura Ra≤0.5nm

Imipira

Nta na kimwe cyemewe (uburebure n'ubugari≥0.5mm)

Ibimenyetso

Nta na kimwe cyemewe

Igishushanyo (Si-Isura)

Qty.≤5, Guhuriza hamwe
Uburebure≤0.5 × diameter ya wafer

Qty.≤5, Guhuriza hamwe
Uburebure≤0.5 × diameter ya wafer

Qty.≤5, Guhuriza hamwe
Uburebure≤0.5 × diameter ya wafer

Ibice

Nta na kimwe cyemewe

Guhezwa

3mm

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