Kupaka kwa SiC / Coated Graphite Substrate/Treyi ya Semiconductor

SiC Coating/Coated Graphite Substrate/Treyi ya Semiconductor Chithunzi Chowonetsedwa

Kufotokozera Kwachidule:

VET Energy SiC Coated Graphite Susceptor for Epitaxial Growth ndi chida chapamwamba chopangidwa kuti chipereke magwiridwe antchito osasinthika komanso odalirika kwa nthawi yayitali. Ili ndi kukana kwabwino kwambiri kwa kutentha komanso kufananizidwa kwamafuta, kuyera kwakukulu, kukana kukokoloka, kupangitsa kuti ikhale yankho labwino kwambiri pakukonza mapulogalamu opaka utoto.

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Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

SiC wokutira / wokutira wa Graphite susceptor wa Semiconductor

TheSiC yokutidwa ndi Graphite Substratendi njira yokhazikika komanso yothandiza kwambiri yomwe idapangidwa kuti ikwaniritse zofunikira zamakampani opanga ma semiconductor. Zokhala ndi gawo la kuyera kwambirisilicon carbide (SiC) zokutira, gawo lapansili limapereka kukhazikika kwapadera kwamafuta, kukana kwa okosijeni, ndi moyo wautali wautumiki, kupangitsa kuti ikhale yabwino kwa machitidwe a MOCVD, zonyamula ma graphite wafer, ndi malo ena otentha kwambiri.

Mawonekedwe:
· Kukaniza kwabwino kwa Thermal Shock
· Kukaniza Kwabwino Kwambiri Kwa Thupi
· Kukaniza Kwabwino Kwambiri kwa Chemical
· Kuyera Kwambiri Kwambiri
· Kupezeka mu Complex Shape
· Zogwiritsidwa ntchito pansi pa Oxidizing Atmosphere

Ntchito:

Zogulitsa ndi Ubwino wake:

1. Kupambana Kwambiri kwa Thermal Resistance:Ndi chiyero chapamwambaKupaka kwa SiC, gawo lapansili limapirira kutentha kwambiri, kuonetsetsa kuti likugwira ntchito mosasinthasintha m'madera ovuta monga epitaxy ndi semiconductor fabrication.

2. Kukhalitsa Kukhazikika:Zida za SiC zokutira za graphite zidapangidwa kuti zisawonongeke ndi dzimbiri ndi makutidwe ndi okosijeni, zomwe zimawonjezera moyo wa gawo lapansi poyerekeza ndi magawo wamba a graphite.

3. Vitreous yokutidwa Graphite:Mapangidwe apadera a vitreous aKupaka kwa SiCimapereka kuuma kwapamwamba kwambiri, kuchepetsa kung'ambika ndi kung'ambika panthawi yotentha kwambiri.

4. High Purity SiC zokutira:Gawo lathu limawonetsetsa kuti kuipitsidwa pang'ono mumayendedwe omvera a semiconductor, kumapereka kudalirika kwa mafakitale omwe amafunikira chiyero chokhazikika.

5. Wide Market Application:TheSiC yokutidwa ndi graphite susceptormsika ukupitilira kukula pomwe kufunikira kwa zinthu zapamwamba zokutira za SiC pakupanga semiconductor kukuchulukirachulukira, ndikuyika gawo ili ngati gawo lalikulu pamsika wonyamula ma graphite wafer komanso msika wa silicon carbide wokutidwa ndi graphite trays.

Katundu Wamtundu wa Base Graphite Material:

Kuchulukana Kwambiri:	1.85g/cm3
Kukanika kwa Magetsi:	11 μm
Flexural Strenth:	49 MPa (500kgf/cm2)
Kulimba M'mphepete mwa nyanja:	58
Phulusa:	<5ppm
Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

CVD SiC薄膜基本物理性能 Zida zoyambira za CVD SiCzokutira
性质 / Katundu	典型数值 / Mtengo Wodziwika
晶体结构 / Crystal Structure	FCC β phase 多晶，主要為(111）取向)
密度 / Density	3.21g/cm³
硬度 / Kuuma	2500 维氏硬度 (500g katundu)
晶粒大小 / Grain SiZe	2 ~ 10μm
纯度 / Chemical Purity	99.99995%
热容 / Kutentha Mphamvu	640 jkg^-1·K^-1
升华温度 / Sublimation Kutentha	2700 ℃
抗弯强度 / Flexural Strength	415 MPa RT 4-mfundo
杨氏模量 / Young's Modulus	430 Gpa 4pt bend, 1300 ℃
导热系数 / Thermal Conductivity	300Wm^-1·K^-1
热膨胀系数 / Thermal Expansion(CTE)	4.5 × 10^-6K^-1

VET Energy ndi omwe amapanga makonda a graphite ndi silicon carbide okhala ndi zokutira zosiyanasiyana monga zokutira za SiC, zokutira za TaC, zokutira zagalasi za kaboni, zokutira kaboni za pyrolytic, ndi zina zambiri, zimatha kupereka magawo osiyanasiyana osinthika a semiconductor ndi mafakitale a photovoltaic.

Gulu lathu laukadaulo limachokera ku mabungwe apamwamba ofufuza zapakhomo, litha kukupatsirani mayankho aukadaulo.

Timapitirizabe kupanga njira zapamwamba zoperekera zipangizo zamakono, ndipo tapanga teknoloji yokhayo yovomerezeka, yomwe ingapangitse mgwirizano pakati pa zokutira ndi gawo lapansi kukhala lolimba komanso losavuta kusokoneza.

Takulandirani ndi manja awiri kuti mudzacheze fakitale yathu, tikambiranenso!