Zida zotsika mtengo zotsika mtengo za High Pure Graphite Semiconductor Application Semiconductor Part

Kufotokozera Kwachidule:

Ntchito: Zigawo za Semiconductor
Kukana (μΩ.m): 8-10 ohm
Porosity (%): 12% Max
Malo Ochokera: Zhejiang, China
Makulidwe Zosinthidwa mwamakonda
Kukula: <= 325mesh
Chiphaso: ISO9001: 2015
Kukula ndi Mawonekedwe: Zosinthidwa mwamakonda


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Zida zotsika mtengo zotsika mtengo za High Pure Graphite Semiconductor Application Semiconductor Part

Ntchito: Zigawo za Semiconductor
Kukana (μΩ.m): 8-10 ohm
Porosity (%): 12% Max
Malo Ochokera: Zhejiang, China
Makulidwe Zosinthidwa mwamakonda
Kukula: <= 325mesh
Chiphaso: ISO9001: 2015
Kukula ndi Mawonekedwe: Zosinthidwa mwamakonda

Zida zotsika mtengo zotsika mtengo za High Pure Graphite Semiconductor Application Semiconductor PartZida zotsika mtengo zotsika mtengo za High Pure Graphite Semiconductor Application Semiconductor PartZida zotsika mtengo zotsika mtengo za High Pure Graphite Semiconductor Application Semiconductor PartZida zotsika mtengo zotsika mtengo za High Pure Graphite Semiconductor Application Semiconductor Part

 


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