SiC Coating Carrier For RTP/RTA ndi gawo lofunikira lomwe limagwiritsidwa ntchito popanga semiconductor lotchedwa Rapid Thermal Processing & Annealing, timagwiritsa ntchito ukadaulo wathu wapatent kuti tipange chonyamulira cha silicon carbide kukhala choyera kwambiri, chofananira chopaka bwino komanso moyo wabwino kwambiri wautumiki, monga komanso kukana kwamphamvu kwamankhwala komanso kukhazikika kwamafuta.
Zogulitsa zathu:
1. High kutentha makutidwe ndi okosijeni kukana mpaka 1700 ℃.
2. Kuyera kwakukulu ndi kufanana kwa kutentha
3. Kukana kwabwino kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.
4. High kuuma, yaying'ono pamwamba, particles zabwino.
5. Moyo wautali wautumiki komanso wokhazikika
| CVD SiC薄膜基本物理性能 Zida zoyambira za CVD SiCzokutira | |
| 性质 / Katundu | 典型数值 / Mtengo Wodziwika |
| 晶体结构 / Kapangidwe ka Crystal | FCC β gawo多晶，主要為（111）取向 |
| 密度 / Kuchulukana | 3.21g/cm³ |
| 硬度 / Kuuma | 2500 维氏硬度 (500g katundu) |
| 晶粒大小 / Mbewu SiZe | 2 ~ 10μm |
| 纯度 / Chemical Purity | 99.99995% |
| 热容 / Kutentha Kwambiri | 640 jkg-1·K-1 |
| 升华温度 / Sublimation Kutentha | 2700 ℃ |
| 抗弯强度 / Flexural Mphamvu | 415 MPa RT 4-mfundo |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| 导热系数 / ThermalConductivity | 300Wm-1·K-1 |
| 热膨胀系数 Kukula kwa Matenthedwe (CTE) | 4.5 × 10-6K-1 |
VET Energy ndi omwe amapanga makonda a graphite ndi silicon carbide okhala ndi zokutira zosiyanasiyana monga zokutira za SiC, zokutira za TaC, zokutira zagalasi za kaboni, zokutira kaboni za pyrolytic, ndi zina zambiri, zimatha kupereka magawo osiyanasiyana osinthika a semiconductor ndi mafakitale a photovoltaic.
Gulu lathu laukadaulo limachokera ku mabungwe apamwamba ofufuza zapakhomo, litha kukupatsirani mayankho aukadaulo.
Timapitirizabe kupanga njira zapamwamba zoperekera zipangizo zamakono, ndipo tapanga teknoloji yokhayo yovomerezeka, yomwe ingapangitse mgwirizano pakati pa zokutira ndi gawo lapansi kukhala lolimba komanso losavuta kusokoneza.
Takulandirani ndi manja awiri kuti mudzacheze fakitale yathu, tikambiranenso!
