Silicon Carbide Coated Graphite Susceptor ya LED Etching

Kufotokozera Kwachidule:

Silicon carbide susceptor for LED etching (SiC tray) ndi chowonjezera chapadera chakuya silicon etching (ICP etching makina). Chonyamulira chawafer, chomwe chimadziwikanso kuti chonyamulira chawafer, chonyamulira cha silicon wafer, chomwe chimadziwikanso kuti pocket wafer. Amagwiritsidwa ntchito kwambiri mu semiconductor CVD ndi vacuum sputtering.


Tsatanetsatane wa Zamalonda

Zolemba Zamalonda

Silicon carbide wokutidwa susceptor ndia kiyichigawo chomwe chimagwiritsidwa ntchito m'njira zosiyanasiyana zopangira semiconductor.Timagwiritsa ntchito ukadaulo wathu wovomerezeka kupanga silicon carbide yokutidwa ndi susceptorkunenepa kwambiri,zabwinozokutirakufananandi moyo wabwino kwambiri wautumiki, komansomkulu mankhwala kukana ndi matenthedwe bata katundu.

Mbiri ya VET Energy ndiwopanga weniweni wa makonda graphite ndi silicon carbide mankhwala ndi CVD zokutira,akhoza kuperekazosiyanasiyanamagawo makonda a semiconductor ndi photovoltaic makampani. OGulu laukadaulo la ur limachokera ku mabungwe apamwamba ofufuza zapakhomo, limatha kupereka mayankho aukadaulozanu.

Timapitiriza kupanga njira zapamwamba kuti tipereke zipangizo zamakono,ndiapanga ukadaulo wapatent, womwe ungapangitse kulumikizana pakati pa zokutira ndi gawo lapansi kukhala lolimba komanso kuti lisasokonezeke.

Fzakudya zathu:

1. Kutentha kwakukulu kwa okosijeni kukana mpaka 1700.
2. Kuyeretsedwa kwakukulu ndikutentha kufanana
3. Kukana kwabwino kwa dzimbiri: asidi, alkali, mchere ndi organic reagents.
4. High kuuma, yaying'ono pamwamba, particles zabwino.
5. Moyo wautali wautumiki komanso wokhazikika

CVD SiC薄膜基本物理性能

Zida zoyambira za CVD SiCzokutira

性质 / Katundu

典型数值 / Mtengo Wofanana

晶体结构 / Kapangidwe ka Crystal

FCC β gawo多晶,主要為(111)取向

密度 / Kuchulukana

3.21g/cm³

硬度 / Kuuma

2500 维氏硬度 (500g katundu)

晶粒大小 / Mbewu SiZe

2 ~ 10μm

纯度 / Chemical Purity

99.99995%

热容 / Kutentha Kwambiri

640 jkg-1·K-1

升华温度 / Sublimation Kutentha

2700 ℃

抗弯强度 / Flexural Mphamvu

415 MPa RT 4-mfundo

杨氏模量 / Young's Modulus

430 Gpa 4pt bend, 1300 ℃

导热系数 / ThermalConductivity

300Wm-1·K-1

热膨胀系数 Kukula kwa Matenthedwe (CTE)

4.5 × 10-6K-1

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