SiC Sintered Silicon Carbide Ceramic Bushing

Brevis descriptio:

Chemical Compositio: Pii Carbide

Duritia: ≥110 HS

Densitas: 3.10-3.15 g/cm3

Tendens virtus:> 350MPa

Scelerisque conductivity:>120

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Silicon Carbide Ceramic Bushing

Pii carbide pressum sintered (SSIC)fit utens tenuissimo SiC pulvere additivo continens. Discursum est utens modos formandi typicos pro aliis ceramicis et sinteratis ad 2,000 ad 2,200° C in atmosphaera gasi iners. Sicut versiones subtilissimae, cum magnitudinum frumenti <5 um, versiones grossae grani cum magnitudinibus frumenti usque ad 1.5. mm in promptu sunt.

SSIC viribus altis distinguitur quae fere constantes usque ad altissimas temperaturas (circiter 1,600° C) distinguitur, sustinens illam vires per longa tempora!

Commoda product:

Princeps caliditas oxidationis resistentia

Corrosion resistentia praeclara

Bonum Abrasionis resistentia

Princeps coefficiens caloris conductivity
Levitas, humilis densitas
Alta duritia
Lorem amet.

Proprietates technicae:

Items	Unitas	Data
duritia	HS	≥110
Porosity Rate	%	<0.3
Density	g/cm3	3.10-3.15
Compressive	MPa	>2200
Fortitudo fractura	MPa	>350
Coefficiens expansion	10/°C	4.0
Contentus Sic	%	≥99
Scelerisque conductivity	W/mk	>120
Modulus elasticus	GPa	≥400
Temperature	°C	1380