Custom cheap reusable High Pure Graphite Graphite Semiconductor Application Parts Semiconductor

Brevis descriptio:

Applicatio: Semiconductor Partes
Resistentia (μΩ.m); 8-10 Ohm
Porositas (%) 12% Max
Originis loco: Zhejiang, China
Dimensiones nativus
Lucrum magnitudine: <=325mesh
Testimonium: ISO9001:2015
Magnitudo et figura; nativus


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Custom cheap reusable High Pure Graphite Graphite Semiconductor Application Parts Semiconductor

Applicatio: Semiconductor Partes
Resistentia (μΩ.m); 8-10 Ohm
Porositas (%) 12% Max
Originis loco: Zhejiang, China
Dimensiones nativus
Lucrum magnitudine: <=325mesh
Testimonium: ISO9001:2015
Magnitudo et figura; nativus

Custom cheap reusable High Pure Graphite Graphite Semiconductor Application Parts SemiconductorCustom cheap reusable High Pure Graphite Graphite Semiconductor Application Parts SemiconductorCustom cheap reusable High Pure Graphite Graphite Semiconductor Application Parts SemiconductorCustom cheap reusable High Pure Graphite Graphite Semiconductor Application Parts Semiconductor

 


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