Sina Manufacturer SiC Coated Graphite MOCVD Epitaxy Susceptor

Brevis descriptio:

Puritas < 5ppm
Bene doping uniformitas
High densitas et adhaesio
Bonum anti-mordax et carbo resistentia

Professional customization
Short plumbum tempus
Stabilis copia
Qualitas imperium et continua emendatione

Epitaxy GaN in Sapphire(RGB/Mini/Micro LED);
Epitaxy of Gan on Si Substrate(UVC);
Epitaxy of Gan on Si Substrate(Electronic Fabrica);
Epitaxy of Si on Si Substrate(circuitus integer);
Epitaxy of SiC in Substrate SiC(subiectum);
Epitaxy of InP on InP

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High quality MOCVD Susceptor Buy online in China

Laganum per plures gradus transire debet antequam in electronicis machinis usui sit paratus. Unus processus magni momenti est epitaxia pii, in qua lagana in susceptoribus graphitis geruntur. Proprietates et qualitates susceptorum effectum habent effectum in qualitate lagani epitaxialis.

Pro graciles cinematographici cinematographici depositiones ut epitaxiam vel MOCVD, VET graphiteequipmentum ultra-puram suppeditat ad substratis vel "lagani". In media processu, hoc apparatu, epitaxia susceptores vel suggestuum satellites MOCVD, primum in ambitu depositionis subiciuntur;

Maximum tortor.
Altum vacuum.
Utere gaseous infestantibus praecursoribus.
Nulla contaminatio, ab- decorticatio.
Repugnantia fortia acida in purgatio operationum

VET Energy est realis fabrica graphitis et carbidi siliconis producta cum efficiens pro industria semiconductoris et photovoltaici. Nostra technica turma e supremo institutionum domesticarum investigationum venit, solutiones tibi magis professionales materiales praebere potest.

Processus progressus continenter enucleamus ut materiae graviores praebeant et technologiam patentem exclusivam elaboraverint, quae vinculum inter tunicam et subiectum arctius et minus proclivior ad detractionem facere potest.

Lineamenta nostra producta:

1. Princeps oxidationis resistentiae temperatus usque ad 1700℃.
2. High puritas ac scelerisque uniformitatem
3. Praeclara corrosio resistentiae: acidum, alcali, salis et reagentia organica.
4. Alta duritia, superficies compacta, particulae tenuis.
5. Longior vita servitus, et magis durabilis

CVD SiC薄膜基本物理性能 Basic physicae CVD SiCcoating
性质 / Property	典型数值 / Valorem Typicam
晶体结构 / Crystal Structure	FCC β phase.111）取向
密度 / Density	3.21 g/cm³
硬度 / Duritia	MMD -500g onus
晶粒大小 / Frumentum	2~10μm
纯度 / Puritas chemica	99.99995%
热容 / Calor Capacitas	640 J·kg^-1·K^-1
升华温度 / Sublimatio Temperature	2700℃
抗弯强度 / Flexural Fortitudo	415 MPa RT 4-punctum
杨氏模量 / Modulus iuvenum	430 Gpa 4pt bend, 1300℃
导热系数 / ThermalConductivity	300W·m^-1·K^-1
热膨胀系数 / Scelerisque Expansion(CTE)	4.5×10^-6K^-1