ProvectaSic Cantilever Paddlenam Wafer Processus a vet-china creatus optimam solutionem semiconductoris fabricandi praebet. Hic paxillus cantileverus ex materia carbide SiC (pii carbide) conficitur, eiusque altitudinis duritiei et caloris resistentia praestantem obtineat observantiam in ambitus caliditatis et mordax. Consilium Cantileverae REMUS sinit laganum in dispensando fideliter sustentari, in periculo ruptionis et damni reducendo.
Sic Cantilever PaddlePraecipua pars in instrumentis fabricandis semiconductoris adhibita est ut fornax oxidatio, fornax diffusio, fornax furnum, summa usus est ad laganum onerandum et exonerandum, subsidia et onerarias lagana in processibus calidis.
Communes structuraeof*Siccantileverpaddle: structura cantilena, in uno fine fixa et in altera libera, typice habet rationem plana et paxillum instar.
VET Energy usus castitatis altae recrystallinae materiae carbide Pii ad qualitatem praestandam.
| Corporalia proprietates Pii Carbide Recrystallized | |
| Property | Typical Value |
| Temperatus operandi (°C) | 1600°C (cum oxygenio) 1700°C (reducing environment) |
| SiC content | > 99.96% |
| Free Si content | < 0.1% |
| mole densitatis | 2.60-2.70 g/cm3 |
| Apparens poros | < 16% |
| Cogo vires | > 600MPa |
| Frigus inflexio virium | 80-90 MPa (20°C) |
| Calidum inflexio virium | 90-100 MPa (1400°C) |
| Scelerisque expansion @ MD°C | 4.70 10-6/°C |
| Scelerisque conductivity @1200°C | 23W/m•K |
| Modulus elasticus | 240 GPa |
| Scelerisque inpulsa resistentia | perquam bonum |
Commoda VET Energy Provecta SiC Cantilever REMUS pro lagano Processus sunt:
- Temperatus stabilitas summa: utilis in ambitibus supra 1600°C;
- Minimum scelerisque expansionem coefficientem: stabilitatem dimensionalem servat, periculum laganum bellicae minuens;
- Maximum puritatem: periculum metalli contagione inferior;
-Chemical inertness: corrosio-repugnans, variis ambitibus gasi apta;
-High vi and hardness : -viuro repugnans, long service life;
- Bonum conductivity scelerisque: adiuvat laganum uniforme calefactionis.
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