Ụgbọ mmiri SiC Wafer/Tower

Nkọwa dị mkpirikpi:


Nkọwa ngwaahịa

Mkpado ngwaahịa

NgwaahịaDescription

A na-eji Silicon carbide Wafer Boat eme ihe n'ọtụtụ ebe dị ka onye na-ejide wafer na usoro mgbasa ozi dị elu.

Uru:

Nguzogide okpomọkụ dị elu:eji eme ihe na 1800 ℃

High thermal conductivity:dakọtara na ihe graphite

Isi ike dị elu:ike nke abụọ na-esote diamond, boron nitride

Nguzogide corrosion:acid siri ike na alkali enweghị corrosion na ya, nguzogide corrosion dị mma karịa tungsten carbide na alumina.

Ibu arọ:obere njupụta, nso aluminom

Enweghị nrụrụ: ọnụ ọgụgụ dị ala nke mgbasawanye thermal

Mgbochi ujo okpomọkụ:ọ nwere ike iguzogide mgbanwe okpomọkụ dị nkọ, na-eguzogide ujo okpomọkụ, ma nwee arụmọrụ kwụsiri ike

 

Njirimara anụ ahụ SiC

Ngwongwo Uru Usoro
Njupụta 3.21 g/cc Sink-ese n'elu na nha
Okpomọkụ akọwapụtara 0.66 J/g °K Igwe ọkụ laser gbara agba
Ike mgbanwe 450 MPa 560 MPa Ehulata isi 4, isi isi RT4, 1300°
Mgbaji siri ike 2.94 MPa m1/2 Microindentation
Isi ike 2800 Vicker, ibu 500 g
Modulus nke na-agbanwe agbanwe 450 GPa430 4 pt gbagọọ, RT4 pt gbagọọ, 1300 Celsius
Nha ọka 2-10 µm SEM

 

Njirimara Thermal nke SiC

Nrụpụta okpomọkụ 250 W/m °K Laser flash usoro, RT
Mgbasawanye okpomọkụ (CTE) 4.5 x 10-6 °K Okpomọkụ ụlọ ruo 950 Celsius C, silica dilatometer

 

 

ụgbọ mmiri1   ụgbọ mmiri2

ụgbọ mmiri3   ụgbọ mmiri4


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