Ihe mkpuchi SiC / mkpuchi nke mkpụrụ graphite maka Semiconductor, Trays Graphite, Sic Graphite epitaxy susceptors

Nkọwa dị mkpirikpi:


  • Ebe amụrụ:Zhejiang, China (Mainland)
  • Nọmba nlereanya:Nọmba nlereanya:
  • Ngwakọta kemịkalụ:SiC mkpuchi graphite
  • Ike mgbanwe:470Mpa
  • Nrụpụta ọkụ:300 W/mK
  • Ogo:Zuru oke
  • Ọrụ:CVD-SiC
  • Ngwa:Semiconductor/Photovoltaic
  • Njupụta:3.21 g/cc
  • Mgbasa ọkụ:4 10-6/K
  • Ash: <5ppm
  • Ọmụmaatụ:dị
  • Koodu HS:6903100000
  • Nkọwa ngwaahịa

    Mkpado ngwaahịa

    SiC mkpuchi / mkpuchi nke Graphite mkpụrụ maka Semiconductor,Ihe osise eserese,SicGraphite epitaxy susceptors,
    Carbon na-enye ihe susceptors, Graphite epitaxy susceptors, Ndị na-ahụ maka eserese eserese, Ihe osise eserese, SiC epitaxy,
    Ndị na-ebu eserese eserese SiC

    Nkọwa ngwaahịa

    Anyị na-edobe nnabata dị nso mgbe ị na-etinye mkpuchi SiC, na-eji igwe kwụ ọtọ dị elu iji hụ na profaịlụ susceptor edo edo. Anyị na-emepụtakwa ihe ndị nwere ezigbo nguzogide ọkụ eletrik maka ojiji na sistemụ na-ekpo ọkụ inductively. Ngwa niile emechara na-abịa na akwụkwọ nrube isi na ịdị ọcha.

    Ụlọ ọrụ anyị na-enye ọrụ usoro mkpuchi SiC site na usoro CVD n'elu graphite, ceramics na ihe ndị ọzọ, nke mere na gas pụrụ iche nwere carbon na silicon na-emeghachi omume na okpomọkụ dị elu iji nweta mkpụrụ ndụ SiC dị ọcha, ụmụ irighiri ihe ndị a na-edebe n'elu ihe ndị a na-ekpuchi, na-akpụ oyi akwa mkpuchi SIC. The SIC guzobere na-ike bonded na graphite isi, na-enye graphite isi pụrụ iche Njirimara, si otú na-eme ka elu nke graphite kọmpat, Porosity-free, elu okpomọkụ nguzogide, corrosion iguzogide na oxidation resistance.

    Usoro CVD na-anapụta ịdị ọcha dị oke elu na njupụta usoro ihe omimi nke mkpuchi SiC na-enweghị porosity. Ihe ọzọ bụ, ebe silicon carbide siri ike nke ukwuu, enwere ike ịchacha ya na elu dị ka enyo. Ihe mkpuchi CVD silicon carbide (SiC) na-enye ọtụtụ uru gụnyere elu ịdị ọcha dị oke elu yana ịdịte aka nke ukwuu. Dị ka ngwaahịa mkpuchi mkpuchi nwere nnukwu arụmọrụ na oghere dị elu na ọnọdụ okpomọkụ dị elu, ha dị mma maka ngwa na ụlọ ọrụ semiconductor na ebe ndị ọzọ dị ọcha. Anyị na-enyekwa ngwaahịa pyrolytic graphite (PG).

    Isi atụmatụ:

    1. Nguzogide oxidation dị elu:

    Nguzogide oxidation ka dị ezigbo mma mgbe okpomọkụ dị elu dị ka 1600 C.

    2. Nnukwu ịdị ọcha: nke a na-eme site na ntinye ikuku kemịkalụ n'okpuru ọnọdụ chlorination dị elu.

    3. Nguzogide nbibi: elu ike, kọmpat elu, ezigbo ahụ.

    4. Nguzogide corrosion: acid, alkali, nnu na organic reagents.

    Nkọwa bụ isi nke mkpuchi CVD-SIC:

    SiC-CVD

    Njupụta

    (g/cc)

    3.21

    Ike mgbanwe

    (Mpa)

    470

    Mgbasa ọkụ ọkụ

    (10-6/K)

    4

    Thermal conductivity

    (W/mK)

    300

    Ngwa: CVD silicon carbide mkpuchi etinyere na ụlọ ọrụ semiconductor ugbua, dị ka MOCVD tray, RTP na oxide etching chamber ebe ọ bụ na silicon nitride nwere nnukwu ujo ujo ma nwee ike iguzogide plasma ume dị elu.
    -Silicon carbide na-ejikarị na semiconductor na mkpuchi.

    Ikike inye:

    10000 Iberibe/Iberibe kwa ọnwa
    Nkwakọ ngwaahịa na nnyefe:
    Mbukota: Standard & siri ike mbukota
    Akpa Poly + Igbe + Katọn + Pallet
    Port:
    Ningbo/Shenzhen/Shanghai
    Etiti oge:

    Ọnụọgụ(Iberibe) 1 - 1000 >1000
    Est. Oge (ụbọchị) 15 A ga-enwe mkparịta ụka

     

    Ozi ụlọ ọrụ

    111

    Ngwa ụlọ ọrụ

    222

    Ụlọ nkwakọba ihe

    333

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