SiC mkpuchi graphite MOCVD Wafer ebu,Ndị na-ahụ maka eserese eseresemaka SiC Epitaxy,
Carbon na-enye ihe susceptors, epitaxy susceptors, Ndị na-ahụ maka eserese eserese,

CVD-SiC mkpuchi nwere àgwà nke edo Ọdịdị, kọmpat ihe, elu okpomọkụ nguzogide, ọxịdashọn-eguzogide, elu ịdị ọcha, acid & alkali iguzogide na organic reagent, na anụ ahụ na chemical Njirimara.

N'iji ya tụnyere ihe ndị dị elu nke graphite, graphite na-amalite oxidize na 400C, nke ga-eme ka nkwụsị nke ntụ ntụ n'ihi oxidation, na-ebute mmetọ gburugburu ebe obibi na ngwaọrụ ndị dị n'akụkụ na oghere oghere, na-amụba adịghị ọcha nke gburugburu ebe obibi dị ọcha.

Agbanyeghị, mkpuchi SiC nwere ike idowe nkwụsi ike anụ ahụ na kemịkalụ na ogo 1600, a na-ejikarị ya na ụlọ ọrụ ọgbara ọhụrụ, ọkachasị na ụlọ ọrụ semiconductor.

Ụlọ ọrụ anyị na-enye ọrụ usoro mkpuchi SiC site na usoro CVD n'elu graphite, ceramics na ihe ndị ọzọ, nke mere na gas pụrụ iche nwere carbon na silicon na-emeghachi omume na okpomọkụ dị elu iji nweta mkpụrụ ndụ SiC dị ọcha, ụmụ irighiri ihe ndị a na-edebe n'elu ihe ndị a na-ekpuchi, na-akpụ oyi akwa mkpuchi SIC. The SIC guzobere na-ike bonded na graphite isi, na-enye graphite isi pụrụ iche Njirimara, si otú na-eme ka elu nke graphite kọmpat, Porosity-free, elu okpomọkụ nguzogide, corrosion iguzogide na oxidation resistance.

Ngwa:

Isi atụmatụ:

1. Nguzogide oxidation dị elu:

Nguzogide oxidation ka dị ezigbo mma mgbe okpomọkụ dị elu dị ka 1700 C.

2. Nnukwu ịdị ọcha: nke a na-eme site na ntinye ikuku kemịkalụ n'okpuru ọnọdụ chlorination dị elu.

3. Nguzogide nbibi: elu ike, kọmpat elu, ezigbo ahụ.

4. Nguzogide corrosion: acid, alkali, nnu na organic reagents.

Nkọwa bụ isi nke mkpuchi CVD-SIC:

Ikike inye:

10000 Iberibe/Iberibe kwa ọnwa
Nkwakọ ngwaahịa na nnyefe:
Mbukota: Standard & siri ike mbukota
Akpa Poly + Igbe + Katọn + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Etiti oge: