SiC Coating Carrier Maka RTP / RTA bụ isi ihe eji eme ihe na usoro nrụpụta semiconductor nke a na-akpọ Rapid Thermal Processing & Annealing, anyị na-eji teknụzụ anyị nwere ikike ime ka onye na-ebu silicon carbide nwee ịdị ọcha dị oke elu, mkpuchi mkpuchi dị mma yana ezigbo ndụ ọrụ, dịka nakwa dị ka elu kemịkalụ na-eguzogide na thermal kwụsie ike Njirimara.
Atụmatụ ngwaahịa anyị:
1. High okpomọkụ ọxịdashọn eguzogide ruo 1700 ℃.
2. High ịdị ọcha na thermal uniformity
3. Magburu onwe corrosion eguzogide: acid, alkali, nnu na organic reagents.
4. Elu ike, kọmpat elu, ezigbo ahụ.
5. Ogologo ndụ ọrụ na ihe na-adịgide adịgide
| CVD SiC薄膜基本物理性能 Njirimara anụ ahụ bụ isi nke CVD SiCmkpuchi | |
| 性质 / Ihe onwunwe | 典型数值 / Uru a na-ahụkarị |
| 晶体结构 / Crystal Structure | FCC β oge多晶，主要为（111) 取向 |
| 密度 / Njupụta | 3.21g/cm³ |
| 硬度 / Isi ike | 2500 维氏硬度 (ibu 500g) |
| 晶粒大小 / ọka SiZe | 2 ~ 10μm |
| 纯度 / Chemical ịdị ọcha | 99.99995% |
| 热容 / Okpomọkụ Ike | 640 nk-1· K-1 |
| 升华温度 / Sublimation okpomọkụ | 2700 ℃ |
| 抗弯强度 / Ike Flexural | 415 MPa RT 4-isi |
| 杨氏模量 Modul nke Young's | 430 Gpa 4pt ekwe, 1300 ℃ |
| 导热系数 / ThermalOmume omume | 300W·m-1· K-1 |
| 热膨胀系数 Mgbasawanye okpomọkụ (CTE) | 4.5 × 10-6K-1 |
VET Energy bụ ezigbo onye nrụpụta nke ngwaahịa graphite ahaziri na ngwaahịa silicon carbide nwere mkpuchi dị iche iche dị ka mkpuchi SiC, mkpuchi TaC, mkpuchi carbon glassy, mkpuchi carbon pyrolytic, wdg, nwere ike ịnye akụkụ dị iche iche ahaziri maka semiconductor na ụlọ ọrụ fotovoltaic.
Anyị ọrụ otu si n'elu ụlọ nnyocha ụlọ ọrụ, nwere ike na-enye ndị ọzọ ọkachamara ihe ngwọta maka gị.
Anyị na-aga n'ihu na-emepụta usoro dị elu iji nye ihe ndị dị elu karị, ma rụọ ọrụ nkà na ụzụ pụrụ iche, nke nwere ike ime ka njikọ dị n'etiti mkpuchi na mkpụrụ ahụ sie ike ma ghara ịdị na-apụ apụ.
Ji obi ụtọ nabata gị ileta ụlọ ọrụ anyị, ka anyị nwee mkparịta ụka ọzọ!
