IC Single-Crystal Silicon Epitaxy

Nkọwa dị mkpirikpi:

Ebe amụrụ:China

Ọdịdị kristal:FCCβ oge

Njupụta:3.21 g / cm;

Isi ike:2500 Vickers;

Nha ọka:2 ~ 10μm;

Ọcha kemịkalụ:99.99995%;

Ike okpomọkụ:640J·kg-1·K-1;

Okpomọkụ Sublimation:2700 ℃;

Ike Felexural:415 Mpa (RT 4-Point);

Modul nke Young:430 Gpa (4pt ekwe, 1300 ℃);

Mgbasawanye okpomọkụ (CTE):4.5 10-6K-1;

Nrụpụta okpomọkụ:300 (W/MK);

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Nkọwa ngwaahịa

Ụlọ ọrụ anyị na-enye ọrụ usoro mkpuchi SiC site na usoro CVD n'elu graphite, ceramics na ihe ndị ọzọ, nke mere na gas pụrụ iche nwere carbon na silicon na-emeghachi omume na okpomọkụ dị elu iji nweta mkpụrụ ndụ SiC dị ọcha, ụmụ irighiri ihe ndị a na-edebe n'elu ihe ndị a na-ekpuchi, na-akpụ oyi akwa mkpuchi SIC.

Isi atụmatụ:

1. Nguzogide oxidation dị elu:

Nguzogide oxidation ka dị ezigbo mma mgbe okpomọkụ dị elu dị ka 1600 C.

2. Nnukwu ịdị ọcha: nke a na-eme site na ntinye mmiri kemịkalụ n'okpuru ọnọdụ chlorination dị elu.

3. Nguzogide nbibi: elu ike, kọmpat elu, ezigbo ahụ.

4. Nguzogide corrosion: acid, alkali, nnu na organic reagents.

Nkọwa isi nke mkpuchi CVD-SIC

Njirimara SiC-CVD
Ọdịdị kristal	FCC β oge
Njupụta	g/cm ³	3.21
Isi ike	Vickers isi ike	2500
Nha ọka	μm	2 ~ 10
Ịdị ọcha kemịkalụ	%	99,99995
Ike ikpo ọkụ	J·kg-1 · K-1	640
Sublimation okpomọkụ	℃	2700
Ike Felexural	MPa (RT 4-isi)	415
Modul nke Young	GPA (4pt gbagọọ, 1300 ℃)	430
Mgbasawanye okpomọkụ (CTE)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300