Ogologo ndụ ogologo ndụ Silicon Carbide Wafer Cassette na mkpuchi SiC

Nkọwa dị mkpirikpi:

VET Energy Silicon Carbide Wafer Cassette na SiC mkpuchi bụ ngwaahịa na-arụ ọrụ dị elu emebere iji nye arụmọrụ na-agbanwe agbanwe na ntụkwasị obi ruo ogologo oge. Ọ nwere oke okpomọkụ dị mma na ịdị n'otu okpomọkụ, ịdị ọcha dị elu, nkwụsị nke mbuze, na-eme ka ọ bụrụ ngwọta zuru oke maka ngwa nhazi wafer.


Nkọwa ngwaahịa

Mkpado ngwaahịa

Njirimara nke silicon carbide recrystallized

silicon carbide recrystallized (R-SiC) bụ ihe na-arụ ọrụ dị elu nke nwere ike nke abụọ na diamond, nke a na-etolite na okpomọkụ dị elu karịa 2000 ℃. Ọ na-ejigide ọtụtụ ihe ndị mara mma nke SiC, dị ka ike okpomọkụ dị elu, nguzogide corrosion siri ike, nguzogide oxidation magburu onwe ya, ezigbo nkwụsị ọkụ ọkụ na ihe ndị ọzọ.

● Magburu onwe n'ibu Njirimara. silicon carbide recrystallized nwere ike dị elu na isi ike karịa eriri carbon, mmetụta dị elu na-eguzogide, nwere ike ịrụ ọrụ dị mma na gburugburu okpomọkụ dị oke egwu, nwere ike ịrụ ọrụ counterbalance ka mma n'ọnọdụ dị iche iche. Tụkwasị na nke ahụ, ọ na-enwekwa mgbanwe dị mma na ọ dịghị emebi ngwa ngwa site na ịgbatị na ịgbatị, nke na-eme ka arụmọrụ ya dịkwuo mma.

● Nnukwu nguzogide corrosion. Carbide silicon recrystallized nwere nnukwu ihe mgbochi corrosion na-eguzogide ụdị mgbasa ozi dị iche iche, nwere ike igbochi mmebi nke mgbasa ozi dị iche iche na-emebi emebi, nwere ike ịnọgide na-arụ ọrụ ya ruo ogologo oge, nwee nkwekọ siri ike, ka o wee nwee ogologo ndụ ọrụ. Tụkwasị na nke ahụ, ọ na-enwekwa nkwụsi ike nke okpomọkụ dị mma, nwere ike ime mgbanwe na mgbanwe mgbanwe okpomọkụ, melite mmetụta ngwa ya.

● Ime ihe adịghị ebelata. N'ihi na usoro ihe nkedo adịghị ebelata, ọ dịghị nrụgide fọdụrụnụ ga-eme ka nrụrụ ma ọ bụ mgbawa nke ngwaahịa ahụ, na akụkụ ndị nwere ọdịdị dị mgbagwoju anya na nkenke dị elu nwere ike ịkwadebe.

重结晶碳化硅物理特性

Njirimara anụ ahụ nke Silicon Carbide recrystallized

性质 / Ihe onwunwe

典型数值 / Uru a na-ahụkarị

使用温度/ Okpomọkụ na-arụ ọrụ (°C)

1600C (ya na oxygen), 1700C (mbelata gburugburu ebe obibi)

SiC含量/ SiC ọdịnaya

> 99.96%

自由Si含量/ Free Si ọdịnaya

<0.1%

体积密度/Nnukwu njupụta

2.60-2.70 g / cm3

气孔率/ O doro anya na porosity

<16%

抗压强度/ ike mkpakọ

> 600MPa

常温抗弯强度/Ike na-ehulata oyi

80-90 MPa (20°C)

高温抗弯强度Ike na-ehulata ọkụ

90-100 MPa (1400°C)

热膨胀系数/ Mgbasa ọkụ @1500°C

4.70 10-6/°C

导热系数/Nrụpụta okpomọkụ @1200°C

23W/m•K

杨氏模量/ Ngbanwe modulu

240 GPA

抗热震性/ Thermal ujo eguzogide

Dị oke mma

VET Energy bụ nkeezigbo onye na-emepụta ngwaahịa graphite na silicon carbide nwere mkpuchi CVD,nwere ike inyedị iche icheakụkụ ahaziri maka semiconductor na fotovoltaic ụlọ ọrụ. Our teknuzu otu si n'elu ụlọ nnyocha ụlọ ọrụ, nwere ike na-enye ndị ọzọ ọkachamara ihe ngwọtamaka gị.

Anyị na-aga n'ihu na-emepụta usoro dị elu iji nye ihe ndị dị elu karị,naarụpụtala nkà na ụzụ nwere ikike pụrụ iche, nke nwere ike ime ka njikọ dị n'etiti mkpuchi na mkpụrụ ahụ sie ike ma ghara ịdị na-apụ apụ.

CVD SiC薄膜基本物理性能

Njirimara anụ ahụ bụ isi nke CVD SiCmkpuchi

性质 / Ihe onwunwe

典型数值 / Uru a na-ahụkarị

晶体结构 / Crystal Structure

FCC β oge多晶,主要为(111) 取向

密度 / Njupụta

3.21g/cm³

硬度 / Isi ike

2500 维氏硬度 (ibu 500g)

晶粒大小 / ọka SiZe

2 ~ 10μm

纯度 / Chemical ịdị ọcha

99.99995%

热容 / Okpomọkụ Ike

640 nk-1· K-1

升华温度 / Sublimation okpomọkụ

2700 ℃

抗弯强度 / Ike Flexural

415 MPa RT 4-isi

杨氏模量 Modul nke Young's

430 Gpa 4pt ekwe, 1300 ℃

导热系数 / ThermalOmume omume

300W·m-1· K-1

热膨胀系数 Mgbasawanye okpomọkụ (CTE)

4.5 × 10-6K-1

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