Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptorbụ ngwa nkwado na kpo oku a haziri ahazi nke a na-eji na-ejide ma na-ekpo ọkụ semiconductor substrates n'oge mmepụta ihe dị ka Deposition ma ọ bụ Epitaxy usoro.

Ọdịdị ya na-agụnye ụdị cylindrical ma ọ bụ ntakịrị barel, n'elu nwere ọtụtụ akpa ma ọ bụ ikpo okwu maka idobe wafers, nwere ike ịbụ ihe siri ike ma ọ bụ oghere, dabere na usoro kpo oku.

Ọrụ bụ isi nke susceptor barrel epitaxial:

- Nkwado substrate: na-ejide ọtụtụ wafer semiconductor n'enweghị nsogbu;
-Heat isi iyi: na-enye nnukwu okpomọkụ chọrọ maka uto site na kpo oku;
-Temperature uniformity: ana achi achi edo kpo oku nke substrates;
-Ntugharị: na-atụgharịkarị n'oge uto iji meziwanye ọnọdụ okpomọkụ na nkesa gas.

Ụkpụrụ ọrụ nke Epi graphite barrel susceptor:
- N'ime reactor epitaxial, a na-ekpo ọkụ susceptor gbọmgbọm ka ọ dị mkpa (nke a bụ 1000 ℃-1200 ℃ maka silicon epitaxy);
- Onye na-ahụ maka gbọmgbọm na-atụgharị iji hụ na nkesa otu okpomọkụ na ikuku gas;
Gases mmeghachi omume na-emebi na oke okpomọkụ, na-akpụ akwa epitaxial n'elu ala.

Ngwa:
-A na-ejikarị eme ihe maka uto silicon epitaxial
-Ọdabara maka epitaxy nke ihe ndị ọzọ semiconductor dị ka GaAs, InP, wdg.

VET Energy na-eji graphite dị ọcha na mkpuchi CVD-SiC kwalite nkwụsi ike kemịkalụ:

Uru nke VET Energy Epitaxial Epi Graphite Barrel Susceptor:

-Elu okpomọkụ kwụsie ike;
-Emma thermal uniformity;
-nwere ike hazie otutu mkpụrụ n'otu oge, na-emezi nrụpụta mmepụta ihe;
- kemịkalụ inert, na-edobe ebe uto dị oke ọcha.