gallium arsenide-phosphide epitaxial

Nkọwa dị mkpirikpi:

Ihe owuwu epitaxial Gallium arsenide-phosphide, nke yiri ihe arụpụtara nke ụdị mkpụrụ ASP (ET0.032.512TU), maka. imepụta kristal na-acha uhie uhie planar.

Zitere anyị email Budata dị ka PDF

Nkọwa ngwaahịa

Mkpado ngwaahịa

Ihe owuwu epitaxial Gallium arsenide-phosphide, nke yiri ihe arụpụtara nke ụdị mkpụrụ ASP (ET0.032.512TU), maka. imepụta kristal na-acha uhie uhie planar.

Ntọala teknụzụ bụ isi
ihe owuwu gallium arsenide-phosphide

1, SubstrateGaAs
a. Ụdị omume	eletrọnịkị
b. Resistivity, ohm-cm	0,008
c. Crystal-latticeorientation	(100)
d. Nhụsianya dị n'elu	(1-3)°

2. Epitaxial oyi akwa GaAs1-х Pх
a. Ụdị omume	eletrọnịkị
b. Ọdịnaya phosphorus na oyi akwa mgbanwe	site na х = 0 ruo х ≈ 0,4
c. Ọdịnaya phosphorus na oyi akwa nke ihe mejupụtara mgbe niile	x ≈ 0,4
d. Ntinye uche nke onye na-ebu, сm3	(0,2-3,0)·1017
e. Ogologo ogologo na kacha nke fotoluminescence spectrum, nm	645-673 nm
f. Ogologo ogologo n'ogo kachasị nke ụdịdị dị iche iche electroluminescence	650-675 nm
g. Ọkpụrụkpụ oyi akwa mgbe niile, micron	Opekempe 8 nm
h. Ọkpụrụkpụ oyi akwa (mkpokọta), micron	Dịkarịa ala 30 nm

3 Efere nwere oyi akwa epitaxial
a. Ntughari, micron	Kachasị 100 um
b. Ọkpụrụkpụ, micron	360-600 mm
c. Square sentimita	Opekempe 6 cm2
d. Ike ọkụ pụrụ iche (mgbe mgbasa oziZn gasịrị), cd/amp	Opekempe 0,05 cd/amp