Silicon Carbide (SiC) Epitaxial Wafer

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Silicon Carbide (SiC) Epitaxial Wafer los ntawm VET Zog yog cov khoom siv ua haujlwm siab tsim los ua kom tau raws li qhov xav tau ntawm lub zog tiam tom ntej thiab RF khoom siv. VET Energy xyuas kom meej tias txhua qhov epitaxial wafer yog tsim los ua kom zoo dua thermal conductivity, tawg voltage, thiab cov cab kuj, ua rau nws zoo tagnrho rau kev siv xws li hluav taws xob tsheb, 5G kev sib txuas lus, thiab high-efficiency fais fab electronics.


Product Detail

Khoom cim npe

VET Energy silicon carbide (SiC) epitaxial wafer yog ib qho kev ua haujlwm siab dav bandgap semiconductor cov khoom uas muaj qhov kub thiab txias tsis kam, siab zaus thiab siab zog yam ntxwv. Nws yog ib qho zoo tagnrho substrate rau lub cim tshiab ntawm cov khoom siv hluav taws xob hluav taws xob. VET Energy siv MOCVD epitaxial thev naus laus zis kom loj hlob zoo SiC epitaxial khaubncaws sab nraud povtseg ntawm SiC substrates, kom ntseeg tau tias kev ua tau zoo thiab sib xws ntawm wafer.

Peb Silicon Carbide (SiC) Epitaxial Wafer muaj kev sib raug zoo nrog ntau yam khoom siv semiconductor xws li Si Wafer, SiC Substrate, SOI Wafer, thiab SiN Substrate. Nrog nws cov txheej txheem epitaxial muaj zog, nws txhawb cov txheej txheem siab heev xws li Epi Wafer kev loj hlob thiab kev koom ua ke nrog cov ntaub ntawv zoo li Gallium Oxide Ga2O3 thiab AlN Wafer, kom ntseeg tau tias siv tau ntau yam thoob plaws cov thev naus laus zis sib txawv. Tsim los ua kom tau raws li kev lag luam-tus qauv Cassette tuav cov tshuab, nws ua kom muaj txiaj ntsig zoo thiab ua haujlwm tau zoo hauv cov khoom siv hluav taws xob semiconductor.

VET Energy cov khoom lag luam tsis txwv rau SiC epitaxial wafers. Peb kuj muab ntau yam khoom siv semiconductor substrate, suav nrog Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, thiab lwm yam. Tsis tas li ntawd, peb tseem nquag tsim cov ntaub ntawv dav dav ntawm cov khoom siv semiconductor, xws li Gallium Oxide Ga2O3 thiab AlN. Wafer, kom ua tau raws li lub zog hluav taws xob yav tom ntej kev lag luam hluav taws xob qhov kev thov rau cov cuab yeej ua haujlwm siab dua.

Xov xwm 6-36
Nqe 6-35

WAFFERING SPECIFICATIONS

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Qib,Sl=Semi-lnsulating

Yam khoom

8-Inch

6-Inch

4-Inch

np

n- Pm

n-Ps

SI

SI

TVV (GBIR)

≤ 6 hli

≤ 6 hli

Hneev (GF3YFCD) - Tus Nqi Tsis Muaj

≤15μm

≤15μm

≤ 25μm

≤15μm

Warp (GF3YFER)

≤ 25μm

≤ 25μm

≤ 40μm

≤ 25μm

LTV (SBIR)-10mmx10mm

< 2 m os

Wafer Ntug

Beveling

NTAU NTAU

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Qib,Sl=Semi-lnsulating

Yam khoom

8-Inch

6-Inch

4-Inch

np

n- Pm

n-Ps

SI

SI

Nto tiav

Ob chav sab Optical Polish, Si- ntsej muag CMP

SurfaceRoughness

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Ntug Chips

Tsis Muaj Kev Tso Cai (ntev thiab dav ≥0.5mm)

Indents

Tsis Muaj Tso Cai

Scratches (Si-Face)

Qty.≤ 5, Ua kom tiav
Length≤0.5 × wafer txoj kab uas hla

Qty.≤ 5, Ua kom tiav
Length≤0.5 × wafer txoj kab uas hla

Qty.≤ 5, Ua kom tiav
Length≤0.5 × wafer txoj kab uas hla

Kev tawg

Tsis Muaj Tso Cai

Ntug Exclusion

3mm ib

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