SiC Coated Graphite Gear Nplhaib yog ib qho tseem ceeb ntawm cov khoom siv hauv ntau yam kev tsim khoom semiconductor. Peb siv peb cov cuab yeej siv patented los ua cov khoom siv silicon carbide nrog cov purity siab heev, zoo txheej uniformity thiab ib tug zoo heev kev pab cuam lub neej, nrog rau cov tshuaj tiv thaiv siab thiab thermal stability.
VET Energy yog lub chaw tsim khoom tiag tiag ntawm cov khoom siv graphite thiab silicon carbide nrog kev kho deg zoo li SiC txheej, TaC txheej, iav carbon txheej, pyrolytic carbon txheej, thiab lwm yam, tuaj yeem muab ntau yam khoom siv rau kev lag luam semiconductor thiab photovoltaic.
Peb pab neeg ua haujlwm los ntawm cov tsev kawm tshawb fawb saum toj kawg nkaus hauv tebchaws, tuaj yeem muab cov ntaub ntawv tshaj lij tshaj lij rau koj.
Peb tsis tu ncua tsim cov txheej txheem siab heev los muab cov ntaub ntawv zoo tshaj plaws, thiab tau ua haujlwm tawm cov cuab yeej tshwj xeeb patented, uas tuaj yeem ua rau kev sib txuas ntawm cov txheej thiab cov substrate nruj dua thiab tsis tshua muaj detachment.
Feature ntawm peb cov khoom:
1. Kub kub oxidation tsis kam mus txog 1700 ℃.
2. High purity thiab thermal uniformity
3. Zoo heev corrosion kuj: acid, alkali, ntsev thiab organic reagents.
4. High hardness, compact nto, zoo hais.
5. Lub neej ua haujlwm ntev dua thiab ruaj khov dua
| CVD SiC薄膜基本物理性能 Basic Physical Properties ntawm CVD SiCtxheej | |
| 性质 / Khoom | 典型数值 / Tus nqi |
| 晶体结构 / Crystal Structure | FCC β theem多晶, 主要为(111) Ib |
| 密度 / Ceev | 3.21 g / cm³ |
| 硬度 / Hardness | 2500 维氏硬度 (500g load) |
| 晶粒大小 / Grain SiZe | 2 ~ 10 hli |
| 纯度 / Tshuaj Purity | 99.99995% |
| Cov duab / Kub Muaj Peev Xwm | 6 40j kg-1· K-1 |
| 升华温度 / Sublimation kub | 2700 ℃ |
| 抗弯强度 / Flexural zog | 415 MPa RT 4-point |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt khoov, 1300 ℃ |
| 导热系数 / KublKev coj ua | 300 Wm-1· K-1 |
| 热膨胀系数 / Thermal Expansion (CTE) | 4.5 × 10-6K-1 |
Zoo siab txais tos koj tuaj xyuas peb lub Hoobkas, cia peb tham ntxiv!
