SiC Coated Graphite Carriers, sic txheej, SiC txheej coated ntawm Graphite substrate rau Semiconductor

Silicon carbide coatedgraphite disk yog los npaj silicon carbide tiv thaiv txheej ntawm graphite los ntawm lub cev los yog tshuaj vapor deposition thiab txau. Cov txheej txheem silicon carbide tiv thaiv tuaj yeem ruaj khov rau graphite matrix, ua rau saum npoo ntawm graphite puag ntom ntom thiab tsis muaj voids, muab cov graphite matrix tshwj xeeb, nrog rau oxidation kuj, acid thiab alkali tsis kam, yaig tsis kam, corrosion kuj, thiab lwm yam tam sim no, Gan txheej yog ib qho tseem ceeb tshaj plaws rau kev loj hlob ntawm epitaxial ntawm silicon carbide.

Silicon carbide semiconductor yog cov khoom siv tseem ceeb ntawm cov tshiab tsim dav band gap semiconductor. Nws cov cuab yeej muaj cov yam ntxwv ntawm qhov kub thiab txias tsis kam, siab voltage kuj, siab zaus, siab zog thiab hluav taws xob tsis kam. Nws muaj qhov zoo ntawm kev hloov pauv ceev ceev thiab kev ua haujlwm siab. Nws tuaj yeem txo cov khoom siv hluav taws xob zoo, txhim kho lub zog hloov dua siab tshiab thiab txo cov khoom ntim. Nws yog tsuas yog siv nyob rau hauv 5g kev sib txuas lus, kev tiv thaiv lub teb chaws thiab tub rog kev lag luam Lub teb chaws RF sawv cev los ntawm aerospace thiab lub hwj chim electronics teb sawv cev los ntawm tshiab zog tsheb thiab "tshiab infrastructure" muaj meej thiab txiav txim siab ua lag luam zeem muag nyob rau hauv ob leeg pej xeem thiab tub rog teb.

Silicon carbide substrate yog cov khoom tseem ceeb ntawm cov tshiab tsim dav band gap semiconductor. Silicon carbide substrate yog tsuas yog siv nyob rau hauv microwave electronics, hwj chim electronics thiab lwm yam teb. Nws yog nyob rau hauv pem hauv ntej kawg ntawm qhov dav band gap semiconductor kev lag luam saw thiab yog cov txiav-ntug thiab cov khoom tseem ceeb ntawm cov khoom siv tseem ceeb.Silicon carbide substrate tuaj yeem muab faib ua ob hom: semi insulating thiab conductive. Ntawm lawv, semi insulating silicon carbide substrate muaj siab resistivity (resistivity ≥ 105 Ω· cm). Semi insulating substrate ua ke nrog heterogeneous gallium nitride epitaxial daim ntawv tuaj yeem siv los ua cov khoom siv ntawm RF, uas feem ntau yog siv hauv 5g kev sib txuas lus, kev tiv thaiv hauv tebchaws thiab kev lag luam tub rog nyob rau saum toj no scenes; Lwm qhov yog conductive silicon carbide substrate nrog tsawg resistivity (qhov resistivity ntau yog 15 ~ 30m Ω· cm). Lub homogeneous epitaxy ntawm conductive silicon carbide substrate thiab silicon carbide tuaj yeem siv los ua cov khoom siv hluav taws xob. Cov xwm txheej tseem ceeb ntawm daim ntawv thov yog lub tsheb hluav taws xob, lub zog hluav taws xob thiab lwm qhov chaw