BJT, CMOS, DMOS thiab lwm yam semiconductor txheej txheem thev naus laus zis

Zoo siab txais tos rau peb lub vev xaib kom paub cov khoom lag luam thiab kev sib tham.

Peb lub vev xaib:https://www.vet-china.com/

 

Raws li cov txheej txheem tsim khoom semiconductor txuas ntxiv ua kom muaj kev tawg, cov lus nto moo hu ua "Moore's Law" tau nthuav tawm hauv kev lag luam. Nws tau thov los ntawm Gordon Moore, yog ib tus tsim ntawm Intel, hauv xyoo 1965. Nws cov ntsiab lus tseem ceeb yog: tus naj npawb ntawm cov transistors tuaj yeem haum rau ntawm ib qho kev sib txuas ua ke yuav ob npaug li txhua 18 txog 24 lub hlis. Txoj cai no tsis yog tsuas yog kev tsom xam thiab kev kwv yees ntawm txoj kev loj hlob ntawm kev lag luam, tab sis kuj yog lub zog tsav rau kev tsim cov txheej txheem ntawm semiconductor - txhua yam yog ua kom cov transistors nrog me me thiab ruaj khov kev ua tau zoo. Txij xyoo 1950 mus txog rau tam sim no, kwv yees li 70 xyoo, tag nrho ntawm BJT, MOSFET, CMOS, DMOS, thiab hybrid BiCMOS thiab BCD txheej txheem thev naus laus zis tau tsim.

1. IB
Bipolar junction transistor (BJT), feem ntau hu ua triode. Tus nqi khiav hauv lub transistor feem ntau yog vim qhov kev sib hloov thiab kev txav ntawm cov neeg nqa khoom ntawm PN kev sib tshuam. Txij li thaum nws koom nrog qhov ntws ntawm ob qho tib si electrons thiab qhov, nws yog hu ua cov khoom siv bipolar.

Saib rov qab ntawm keeb kwm ntawm nws txoj kev yug. Vim yog lub tswv yim ntawm kev hloov lub tshuab nqus tsev triodes nrog cov khoom siv amplifiers, Shockley tau thov kom ua tiav cov kev tshawb fawb ntawm semiconductors nyob rau lub caij ntuj sov xyoo 1945. Nyob rau hauv ib nrab xyoo 1945, Tswb Labs tau tsim ib pab pawg neeg tshawb fawb txog lub xeev physics los ntawm Shockley. Nyob rau hauv pawg no, tsis yog tsuas yog physicists, tab sis kuj circuit engineers thiab chemists, xws li Bardeen, ib tug theoretical physicist, thiab Brattain, ib tug sim physicist. Nyob rau lub Kaum Ob Hlis 1947, ib qho kev tshwm sim uas tau suav tias yog ib qho tseem ceeb ntawm cov tiam tom ntej tau tshwm sim zoo kawg nkaus - Bardeen thiab Brattain tau ua tiav lub ntiaj teb thawj germanium point-hu transistor nrog tam sim no amplification.

640 (8)

Bardeen thiab Brattain thawj tus taw tes-hu rau transistor

Tsis ntev tom qab ntawd, Shockley tau tsim lub bipolar junction transistor hauv xyoo 1948. Nws tau npaj siab tias lub transistor tuaj yeem tsim los ntawm ob lub pn junctions, ib qho rau pem hauv ntej tsis ncaj ncees thiab lwm qhov kev thim rov qab, thiab tau txais daim ntawv pov thawj nyob rau lub Rau Hli 1948. Xyoo 1949, nws luam tawm cov ncauj lus kom ntxaws. kev ua haujlwm ntawm kev sib tshuam transistor. Ntau tshaj li ob xyoos tom qab, cov kws tshawb fawb thiab cov kws tshaj lij ntawm Bell Labs tau tsim cov txheej txheem kom ua tiav cov khoom siv hluav taws xob sib txuas (milestone hauv xyoo 1951), qhib lub sijhawm tshiab ntawm kev siv tshuab hluav taws xob. Hauv kev lees paub ntawm lawv cov kev koom tes rau kev tsim cov transistors, Shockley, Bardeen thiab Brattain sib koom ua ke yeej 1956 Nobel nqi zog hauv Physics.

640 (1)

Daim duab yooj yim ntawm NPN bipolar junction transistor

Hais txog cov qauv ntawm kev sib tshuam ntawm cov transistors, BJTs yog NPN thiab PNP. Cov ncauj lus kom ntxaws sab hauv yog qhia hauv daim duab hauv qab no. Lub impurity semiconductor cheeb tsam sib haum mus rau lub emitter yog lub cheeb tsam emitter, uas muaj ib tug siab doping concentration; lub impurity semiconductor cheeb tsam sib haum mus rau lub hauv paus yog lub hauv paus cheeb tsam, uas muaj ib tug heev nyias dav thiab ib tug heev tsawg doping concentration; lub impurity semiconductor cheeb tsam sib haum mus rau lub collector yog lub collector cheeb tsam, uas muaj ib tug loj cheeb tsam thiab ib tug heev tsawg doping concentration.

640
Qhov zoo ntawm BJT thev naus laus zis yog cov lus teb ceev, siab transconductance (kev hloov pauv hloov pauv hloov pauv hloov pauv hloov pauv hloov pauv loj), lub suab nrov qis, qhov tseeb analog siab, thiab muaj zog tsav tam sim no; qhov tsis zoo yog kev sib koom ua ke tsawg ( ntsug qhov tob tsis tuaj yeem txo nrog rau sab nraud) thiab kev siv hluav taws xob siab.

2. MOS

Hlau Oxide Semiconductor Field Effect Transistor (Metal Oxide Semiconductor FET), uas yog, lub teb cov nyhuv transistor uas tswj kev hloov ntawm cov semiconductor (S) conductive channel los ntawm kev siv hluav taws xob rau lub rooj vag ntawm cov hlau txheej (M-hlau aluminium) thiab los ntawm txheej oxide (O-insulating txheej SiO2) los tsim cov nyhuv ntawm cov hluav taws xob. Txij li thaum lub rooj vag thiab qhov chaw, thiab lub rooj vag thiab qhov ntws tawm yog cais los ntawm SiO2 insulating txheej, MOSFET tseem hu ua lub rooj vag insulated teb cov nyhuv transistor. Xyoo 1962, Tswb Labs tau tshaj tawm txoj kev vam meej, uas tau los ua ib qho tseem ceeb tshaj plaws hauv keeb kwm ntawm kev txhim kho semiconductor thiab ncaj qha tso lub hauv paus rau kev tshwm sim ntawm semiconductor nco.

MOSFET tuaj yeem muab faib ua P channel thiab N channel raws li hom channel conductive. Raws li lub rooj vag voltage amplitude, nws muaj peev xwm muab faib ua: depletion hom-thaum lub rooj vag voltage yog xoom, muaj ib tug conductive channel ntawm lub ntws thiab qhov chaw; kev txhim kho hom-rau N (P) channel pab kiag li lawm, muaj ib tug conductive channel tsuas yog thaum lub rooj vag voltage ntau dua (tsawg dua) xoom, thiab lub hwj chim MOSFET yog feem ntau N channel li hom.

640 (2)

Qhov sib txawv tseem ceeb ntawm MOS thiab triode suav nrog tab sis tsis txwv rau cov ntsiab lus hauv qab no:

-Triodes yog cov khoom siv bipolar vim tias ob qho tib si feem ntau thiab cov neeg nqa khoom tsawg koom nrog kev coj ua tib lub sijhawm; thaum MOS tsuas yog ua hluav taws xob los ntawm cov neeg nqa khoom feem ntau hauv cov khoom siv hluav taws xob, thiab tseem hu ua unipolar transistor.
-Triodes yog cov cuab yeej tswj tam sim no nrog lub zog siv zog; thaum MOSFETs yog cov khoom siv hluav taws xob tswj hluav taws xob uas siv hluav taws xob tsawg.
-Triodes muaj kev tiv thaiv loj, thaum MOS hlab muaj me me rau-ua haujlwm, tsuas yog ob peb puas milliohms. Hauv cov khoom siv hluav taws xob tam sim no, MOS raj feem ntau yog siv los ua cov keyboards, feem ntau vim tias kev ua haujlwm ntawm MOS yog qhov siab dua piv rau triodes.
-Triodes muaj tus nqi zoo dua, thiab MOS hlab kuj tseem kim.
-Tam sim no, MOS raj tau siv los hloov cov triodes hauv ntau qhov xwm txheej. Tsuas yog nyob rau hauv qee qhov teeb meem qis lossis lub zog tsis muaj zog, peb yuav siv triodes xav txog tus nqi kom zoo dua.
3. CMOS

Complementary Metal Oxide Semiconductor: CMOS technology siv complementary p-type thiab n-type metal oxide semiconductor transistors (MOSFETs) los tsim cov khoom siv hluav taws xob thiab cov logic circuits. Cov duab hauv qab no qhia tau hais tias muaj CMOS inverter, uas yog siv rau "1 → 0" lossis "0 → 1" hloov dua siab tshiab.

640 (3)

Cov duab hauv qab no yog CMOS ntu ntu. Sab laug yog NMS, thiab sab xis yog PMOS. G tus ncej ntawm ob lub MOS txuas ua ke ua ib lub rooj nkag nkag, thiab D ncej txuas nrog ua ke raws li cov khoom tso tawm. VDD txuas nrog lub hauv paus ntawm PMOS, thiab VSS txuas nrog lub hauv paus ntawm NMOS.

640 (4)

Xyoo 1963, Wanlass thiab Sah ntawm Fairchild Semiconductor tau tsim lub CMOS Circuit Court. Xyoo 1968, American Radio Corporation (RCA) tau tsim thawj CMOS integrated circuit khoom, thiab txij thaum ntawd los, CMOS Circuit Court tau ua tiav kev loj hlob. Nws qhov zoo yog kev siv hluav taws xob tsawg thiab kev sib koom ua ke siab (STI / LOCOS txheej txheem tuaj yeem txhim kho kev sib koom ua ke ntxiv); Nws qhov tsis zoo yog qhov muaj qhov cuam tshuam ntawm qhov ntsuas phoo (PN junction rov qab kev tsis ncaj ncees yog siv los ntawm kev sib cais ntawm MOS hlab, thiab cuam tshuam tau yooj yim tsim lub voj voog thiab hlawv lub voj voog).

4. DMOS
Ob chav-Diffused Hlau Oxide Semiconductor: Zoo ib yam li cov qauv ntawm cov khoom siv MOSFET zoo tib yam, nws kuj muaj qhov chaw, ntws, rooj vag thiab lwm yam electrodes, tab sis qhov tawg ntawm qhov kawg ntawm qhov ntws tawm yog siab. Ob chav diffusion txheej txheem yog siv.

Daim duab hauv qab no qhia txog ntu ntu ntawm tus qauv N-channel DMOS. Hom DMOS no feem ntau yog siv rau hauv cov ntawv thov hloov qis qis, qhov chaw ntawm MOSFET txuas nrog hauv av. Tsis tas li ntawd, muaj P-channel DMOS. Hom DMOS no feem ntau yog siv nyob rau hauv high-sab switching daim ntaub ntawv, qhov twg lub hauv paus ntawm MOSFET txuas nrog rau qhov zoo voltage. Zoo ib yam li CMOS, cov khoom siv DMOS ntxiv siv N-channel thiab P-channel MOSFETs ntawm tib lub nti los muab cov kev hloov pauv ntxiv.

640 (6)

Nyob ntawm cov kev taw qhia ntawm cov channel, DMOS tuaj yeem muab faib ua ob hom, uas yog ntsug ob-diffused hlau oxide semiconductor teb cov nyhuv transistor VDMOS (Vertical Double-Diffused MOSFET) thiab lateral ob-diffused hlau oxide semiconductor teb nyhuv transistor LDMOS (Lateral Ob -Diffused MOSFET).

VDMOS cov khoom siv tau tsim nrog cov kab ntsug. Piv nrog rau DMOS cov khoom siv sab nraud, lawv muaj qhov sib zog tawg ntau dua thiab muaj peev xwm tuav tam sim no, tab sis qhov kev tawm tsam tseem tseem loj heev.

640 (7)

LDMOS cov khoom siv yog tsim los nrog ib sab channel thiab yog asymmetric zog MOSFET li. Piv nrog rau cov khoom siv DMOS ntsug, lawv tso cai rau qis dua ntawm kev tiv thaiv thiab kev hloov pauv nrawm dua.

640 (5)

Piv nrog rau MOSFETs ib txwm muaj, DMOS muaj ntau dua ntawm-capacitance thiab qis dua, yog li nws tau dav siv hauv cov khoom siv hluav taws xob muaj zog xws li lub zog hloov hluav taws xob, cov cuab yeej hluav taws xob thiab hluav taws xob tsav tsheb.

5. BiCMOS
Bipolar CMOS yog ib qho kev siv tshuab uas sib xyaw CMOS thiab cov khoom siv bipolar ntawm tib lub nti tib lub sijhawm. Nws lub tswv yim yooj yim yog siv CMOS cov cuab yeej ua lub hauv paus tseem ceeb hauv Circuit Court, thiab ntxiv cov khoom siv bipolar lossis circuits uas yuav tsum tau tsav lub peev xwm loj. Yog li, BiCMOS circuits muaj qhov zoo ntawm kev sib koom ua ke siab thiab kev siv hluav taws xob tsawg ntawm CMOS circuits, thiab qhov zoo ntawm kev kub ceev thiab muaj zog tsav tam sim no ntawm BJT circuits.

640

STMicroelectronics 'BiCMOS SiGe (silicon germanium) thev naus laus zis ua ke RF, analog thiab cov khoom siv digital ntawm ib lub nti, uas tuaj yeem txo tus naj npawb ntawm cov khoom siv sab nraud thiab txhim kho lub zog noj.

6. BCD
Bipolar-CMOS-DMOS, cov thev naus laus zis no tuaj yeem ua rau bipolar, CMOS thiab DMOS li ntawm tib lub nti, hu ua BCD txheej txheem, uas yog thawj zaug ua tiav los ntawm STMicroelectronics (ST) hauv xyoo 1986.

640 (1)

Bipolar yog haum rau analog circuits, CMOS yog haum rau cov digital thiab logic circuits, thiab DMOS yog haum rau lub hwj chim thiab high-voltage li. BCD muab cov txiaj ntsig zoo ntawm peb. Tom qab kev txhim kho tas mus li, BCD tau siv dav hauv cov khoom lag luam hauv kev tswj hwm hluav taws xob, analog cov ntaub ntawv tau txais thiab lub zog actuators. Raws li ST's official lub vev xaib, cov txheej txheem paub tab rau BCD tseem nyob ib puag ncig 100nm, 90nm tseem nyob hauv tus qauv tsim, thiab 40nmBCD thev naus laus zis tau koom nrog nws cov khoom lag luam tom ntej hauv kev tsim kho.

 


Post lub sij hawm: Sep-10-2024
WhatsApp pawg online sib tham!