Tus nqi qis tshaj rau Tuam Tshoj High Quality Customized Graphite rhaub rau Polycrystalline Silicon Ingot Rauv

Lus piav qhia luv luv:

Purity <5ppm
‣ Zoo doping uniformity
‣ High ceev thiab adhesion
‣ Zoo tiv thaiv corrosive thiab carbon resistant

‣ Kev kho kom haum xeeb
‣ Lub sijhawm luv luv
‣ Kev muab khoom ruaj khov
‣ Kev tswj kom zoo thiab kev txhim kho txuas ntxiv

Epitaxy ntawm GaN ntawm Sapphire(RGB / Mini / Micro LED);Epitaxy ntawm GaN ntawm Si Substrate(UVC);Epitaxy ntawm GaN ntawm Si Substrate(Cov Khoom Siv Hluav Taws Xob);Epitaxy ntawm Si ntawm Si Substrate(Integrated Circuit Court);Epitaxy ntawm SiC ntawm SiC Substrate(Substrate);Epitaxy ntawm InP ntawm InP


Product Detail

Khoom cim npe

Peb txuas ntxiv mus ntxiv thiab ua kom tiav peb cov kev daws teeb meem thiab kev pabcuam. Nyob rau tib lub sijhawm, peb ua haujlwm nquag ua kev tshawb fawb thiab txhim kho tus nqi qis tshaj rau Tuam Tshoj High Quality Customized Graphite rhaub rau Polycrystalline Silicon Ingot Rauv, Peb lub tuam txhab loj hlob sai thiab muaj koob meej vim nws txoj kev mob siab rau kev tsim khoom zoo tshaj plaws, tus nqi loj ntawm cov khoom thiab cov neeg siv khoom zoo heev.
Peb txuas ntxiv mus ntxiv thiab ua kom tiav peb cov kev daws teeb meem thiab kev pabcuam. Nyob rau tib lub sijhawm, peb ua haujlwm nquag ua haujlwm tshawb fawb thiab txhim kho rauTuam Tshoj Graphite Cua sov rauv, Graphite Thermal Field, Tsuas yog ua kom tiav cov khoom zoo kom tau raws li cov neeg siv khoom xav tau, tag nrho peb cov khoom thiab cov kev daws teeb meem tau raug soj ntsuam nruj me ntsis ua ntej xa zaub mov. Peb ib txwm xav txog cov lus nug ntawm sab ntawm cov neeg siv khoom, vim tias koj yeej, peb yeej!

2022 zoo MOCVD Susceptor Yuav online hauv Suav teb

 

Pom pom Density: 1.85g / cm3
Hluav taws xob Resistivity: 11 μΩ
Flexural zog: 49 MPa (500kgf / cm2)
Ntug Hardness: 58
Tshauv: <5 ppm
Thermal conductivity: 116 W / mK (100 kcal / mhr-℃)

Lub wafer yog ib daim ntawm silicon roughly 1 millimeter tuab uas muaj ib tug heev tiaj tus nto ua tsaug rau cov txheej txheem uas yog technically xav tau heev. Kev siv tom qab txiav txim siab seb cov txheej txheem loj hlob siv lead ua yuav tsum ua haujlwm li cas. Nyob rau hauv cov txheej txheem Czochralski, piv txwv li, cov polycrystalline silicon yog yaj thiab xaum-thin noob siv lead ua yog dipped rau hauv silicon molten. Cov noob siv lead ua yog ces tig thiab maj mam rub upwards. Ib colossus hnyav heev, monocrystal, tshwm sim. Nws muaj peev xwm xaiv cov monocrystal cov yam ntxwv hluav taws xob los ntawm kev ntxiv me me ntawm high-purity dopants. Cov crystals yog doped raws li cov neeg siv khoom specifications thiab ces polished thiab txiav mus rau hauv slices. Tom qab ntau yam kev tsim khoom ntxiv, cov neeg siv khoom tau txais nws cov wafers tshwj xeeb hauv ntim, uas tso cai rau cov neeg siv khoom siv wafer tam sim ntawd hauv nws cov kab ntau lawm.

2

Lub wafer yuav tsum dhau los ntawm ob peb kauj ruam ua ntej nws npaj siv rau hauv cov khoom siv hluav taws xob. Ib txheej txheem tseem ceeb yog silicon epitaxy, uas cov wafers nqa ntawm graphite susceptors. Cov khoom thiab qhov zoo ntawm cov susceptors muaj qhov cuam tshuam tseem ceeb ntawm qhov zoo ntawm wafer's epitaxial txheej.

Rau nyias zaj duab xis deposition theem xws li epitaxy lossis MOCVD, VET khoom siv ultra-ntshiab graphiteequipment siv los txhawb substrates lossis "wafers". Ntawm qhov tseem ceeb ntawm cov txheej txheem, cov cuab yeej no, epitaxy susceptors lossis satellite platforms rau MOCVD, yog thawj zaug rau qhov chaw tso nyiaj:

Kub kub.
Lub tshuab nqus tsev siab.
Kev siv cov aggressive gaseous precursors.
Zero contamination, tsis muaj peeling.
Tiv thaiv kom muaj zog acids thaum lub sij hawm ntxuav


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