Graphite Wafer Nkoj rau Deposition

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VET Energy graphite wafer nkoj yog ib qho khoom siv tau zoo rau cov txheej txheem tso rau hauv semiconductor, photovoltaic thiab lwm yam lag luam. Ua los ntawm high-purity, high-density graphite khoom, cov khoom no muaj zoo heev kub tsis kam, corrosion kuj, seem stability thiab lwm yam ntxwv, thiab muaj peev xwm muab ib tug ruaj khov cab kuj platform rau lub deposition txheej txheem los xyuas kom meej lub uniformity thiab flatness ntawm nyias zaj duab xis deposition. .

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Product Detail

Khoom cim npe

PECVD graphite nkoj los ntawm VET Zog yog tsim los nrog high-purity isostatic graphite, featuring porosity hauv qab 15% thiab nto roughness Ra≤1.6μm. Lub superior dimensional stability thiab thermal conductivity kom zoo ib yam zaj duab xis deposition thiab enhanced cell efficiency.

Graphite khoom los ntawm SGL:

Tus Qauv Zauv: R6510
Index	Test txuj	Tus nqi	Chav tsev
Nruab nrab grain loj	ISO 13320 Kev Tswj Xyuas	10	ib m
Qhov ntom ntom	DIN IEC 60413 / 204 Kev Tswj Xyuas	1.83 ib	g/cm³
Qhib porosity	DIN66133	10	%
Nruab nrab pore loj	DIN66133	1.8	ib m
Permeability	TIAB SA 51935	0.06 ib	cm²/s
Rockwell hardness HR5/100	IEC 60413 / 303	90	HR
Tshwj xeeb hluav taws xob resistivity	DIN IEC 60413 / 402 Kev Tswj Xyuas	13	μΩm
Flexural zog	DIN IEC 60413 / 501 Kev Ua Haujlwm	60	MPa
Compressive zog	TIAB SA 51910	130	MPa
Young's modulus	TIAB SA 51915	11.5 × 10 hli	MPa
Thermal expansion (20-200 ℃)	TIAB SA 51909	4.2 X 10^-6	K^-1
Thermal conductivity (20 ℃)	TIAB SA 51908	105	Wm^-1K^-1

Nws yog tsim tshwj xeeb rau kev ua haujlwm siab hnub ci cell tsim, txhawb G12 loj-loj wafer ua. Optimized carrier tsim ho nce throughput, enabling ntau yield tus nqi thiab txo nqi ntau lawm.

Yam khoom	Hom	Number wafer cab kuj
PEVCD Grephite nkoj - Lub 156 series	156-13 grephite nkoj	144
	156-19 grephite nkoj	216
	156-21 grephite nkoj	240
	156-23 graphite nkoj	308
PEVCD Grephite nkoj - Lub 125 series	125-15 grephite nkoj	196
	125-19 grephite nkoj	252
	125-21 grphite nkoj	280