No ka hoʻokō ʻana i ka ʻoluʻolu i manaʻo nui ʻia e nā mea kūʻai aku, loaʻa iā mākou kā mākou hui ikaika e hāʻawi i kā mākou kākoʻo maikaʻi loa ma luna o nā mea āpau e pili ana i ka kūʻai ʻana, ka loaʻa kālā, ka piʻi ʻana mai, ka hana ʻana, ka hoʻokele maikaʻi ʻana, ka paʻi ʻana, ka hale kūʻai a me ka logistic no ka Supply OEM China Excellent Sic Green ʻO Silicon Carbide no Bonded Coated Abrasives, ʻO ke kūlana kiʻekiʻe, ka lawelawe manawa kūpono a me ka helu Aggressive, loaʻa iā mākou kahi kaulana maikaʻi loa i ka ʻoihana waiwai ʻoiai ʻo ka hoʻokūkū ikaika o ka honua.
ʻO nā pōmaikaʻi kūikawā o kā mākou mau mea hoʻopili graphite i uhi ʻia ʻo SiC me ka maʻemaʻe kiʻekiʻe loa, ka uhi homogenous a me ke ola lawelawe maikaʻi loa. Loaʻa iā lākou ke kūpaʻa kemika kiʻekiʻe a me nā waiwai paʻa wela.
ʻO ka uhi SiC o ka substrate Graphite no nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe maikaʻi a me ke kū'ē i ka lewa oxidizing.
Hoʻohana ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.
Nā hiʻohiʻona:
· ʻOi loa ka Thermal Shock Resistance
· Kūleʻa haʻalulu kino maikaʻi
· Kūʻē Kemika maikaʻi loa
· Maʻemaʻe Kiʻekiʻe
· Loaʻa ma ke ʻano paʻakikī
· Hoʻohana ma lalo o ka Oxidizing Atmosphere
Noi:
Nā ʻano maʻamau o ka Material Graphite Base:
ʻIke ʻia ka mānoanoa: | 1.85 g/cm3 |
Ke kū'ē uila: | 11 μΩm |
ʻO ke koʻikoʻi ʻoluʻolu: | 49 MPa (500kgf/cm2) |
Paʻa Paʻa: | 58 |
lehu: | <5ppm |
ʻO ka wela wela: | 116 W/mK (100 kcal/mhr- ℃) |
Hāʻawi ke kalapona i nā mea hoʻopili a me nā ʻāpana graphite no nā reactors epitaxy i kēia manawa. Loaʻa i kā mākou kōpili nā mea hoʻopili pahu no nā ʻāpana noi a me nā LPE, nā ʻāpana pancake no nā LPE, CSD, a me Gemini, a me nā mea hoʻohana hoʻokahi-wafer no nā ʻāpana noi a me ASM. hāʻawi i ka hoʻolālā maikaʻi loa no kāu noi.