SiC Sintered Silicon Carbide Ceramic Bushing

ʻO ka wehewehe pōkole:

ʻO ka hui kino: Silicon Carbide

Paʻakikī: ≥110 HS

Māmā: 3.10-3.15 g/cm3

Ka ikaika kulou:> 350MPa

ʻO ka wela wela:>120

E hoʻouna i ka leka uila iā mākou Hoʻoiho ma ke ʻano he PDF

Huahana Huahana

Sintered Silicon Carbide Ceramic Bushing

ʻO ka carbide silikoni paʻi ʻole ʻia (SSIC)hana ʻia me ka hoʻohana ʻana i ka pauka SiC maikaʻi loa i loaʻa nā mea hoʻohui sintering. Hoʻohana ʻia ia me ka hoʻohana ʻana i nā ʻano hana maʻamau no nā seramika ʻē aʻe a sintered ma 2,000 a 2,200 ° C i loko o kahi ea kinoea inert. A me nā ʻano huaʻai maikaʻi, me ka nui o ka palaoa <5 um, nā ʻano coarse-grained me ka nui o ka palaoa a hiki i ka 1.5 mm loaʻa.

Hoʻokaʻawale ʻia ʻo SSIC e ka ikaika kiʻekiʻe e noho mau ana a hiki i nā wela kiʻekiʻe loa (ma kahi o 1,600° C), e mālama ana i kēlā ikaika i nā wā lōʻihi!

Nā mea maikaʻi o ka huahana:

Ke kū'ē kū'ē i ka wela wela

Kūleʻa ʻino maikaʻi loa

Kūleʻa maikaʻi abrasion

Kiʻekiʻe coefficient o ka wela conductivity
Lubricity pono'ī, haʻahaʻa haʻahaʻa
Paʻakiki kiʻekiʻe
Hoʻolālā maʻamau.

Nā waiwai ʻenehana:

Nā mea	Unite	ʻIkepili
ʻoʻoleʻa	HS	≥110
Ka helu Porosity	%	<0.3
ʻO ka mānoanoa	g/cm3	3.10-3.15
Hoʻopiʻi	MPa	>2200
Ka ikaika haʻihaʻi	MPa	>350
Coefficient o ka hoonui	10/°C	4.0
Maikaʻi o Sic	%	≥99
ʻO ke kau wela wela	W/mk	>120
Elastic Modulus	GPa	≥400
Mahana	°C	1380