ʻO ka SiC uhi graphite MOCVD Wafer mea lawe,Nā mea kākoʻo graphiteno SiC Epitaxy,
Hāʻawi ke kalapona i nā mea mālama, epitaxy susceptors, Nā mea kākoʻo graphite,

Loaʻa i ka uhi CVD-SiC nā hiʻohiʻona o ke ʻano like ʻole, nā mea paʻa, ke kūpaʻa wela kiʻekiʻe, ke kūpaʻa ʻana o ka oxidation, ka maʻemaʻe kiʻekiʻe, ke kūpaʻa a me ka alkali a me ka reagent, me nā waiwai kino a me nā kemika.

Ke hoʻohālikelike ʻia me nā mea graphite maʻemaʻe kiʻekiʻe, hoʻomaka ka graphite e oxidize ma 400C, ka mea e hoʻopau ai i ka pauka ma muli o ka oxidation, ka hopena i ka pollution kaiapuni i nā ʻaoʻao peripheral a me nā keʻena māmā, a hoʻonui i nā haumia o ke kaiapuni maʻemaʻe kiʻekiʻe.

Eia nō naʻe, hiki i ka uhi ʻana o SiC ke mālama i ke kūpaʻa kino a me ke kemika ma 1600 degere, hoʻohana nui ʻia i ka ʻoihana hou, ʻoi loa i ka ʻoihana semiconductor.

Hāʻawi kā mākou hui i nā lawelawe kaʻina hana hoʻoheheʻe SiC ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe. e hana ana i ka papa pale SIC. ʻO ka SIC i hoʻokumuʻia ua paʻa paʻa i ka graphite base, e hāʻawi ana i ka graphite base waiwai kūikawā, pēlā e hana ai i kaʻili o ka graphite compact, Porosity-free, kiʻekiʻe o ka mahana wela, ke kū'ēʻana a me ke kū'ēʻana.

Noi:

Nā hiʻohiʻona nui:

1. Kiʻekiʻe wela oxidation kū'ē:

ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1700 C.

2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.

3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.

4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.

ʻO nā kikoʻī nui o ka CVD-SIC Coatings:

Hiki ke hoolako:

10000 ʻāpana / ʻāpana i kēlā me kēia mahina
Puke a me ka lawe ʻana:
Hoʻopili: Kūʻai maʻamau & ikaika
ʻeke poli + pahu + pahu pahu + pallet
Awa:
Ningbo/Shenzhen/Shanghai
Ka manawa o waena o ka hoʻomaka a i ka wā pau: