ʻO ka uhi SiC i uhi ʻia o ka substrate Graphite no Semiconductor, ka uhi ʻana o Silicon carbide, MOCVD Susceptor

ʻO ka wehewehe pōkole:


  • Kahi i kumu:Zhejiang, Kina (Mainland)
  • Helu kumu hoʻohālike:Waapa3004
  • Huina Kemika:graphite i uhi ʻia ʻo SiC
  • Ka ikaika wiliwili:470Mpa
  • ʻO ke kau wela wela:300 W/mK
  • ʻAno maikaʻi:hemolele
  • Hana:CVD-SiC
  • Noi:Semiconductor /Photovoltaic
  • ʻO ka mānoanoa:3.21 g/cc
  • Hoʻonui wela:4 10-6/K
  • lehu: <5ppm
  • Laʻana:Loaʻa
  • HS Code:6903100000
  • Huahana Huahana

    Huahana Huahana

    ʻO ka uhi SiC i uhi ʻia o ka substrate Graphite no Semiconductor, ka uhi ʻana o ka silikon carbide,MOCVD Susceptor,
    MOCVD Susceptor, ʻO ka uhi SiC i uhi ʻia o ka substrate Graphite no Semiconductor, ʻO ka uhi ʻana o Silicon Carbide,

    Hōʻike huahana

    Loaʻa i ka uhi CVD-SiC nā hiʻohiʻona o ke ʻano like ʻole, nā mea paʻa, ke kūpaʻa wela kiʻekiʻe, ke kūpaʻa ʻana o ka oxidation, ka maʻemaʻe kiʻekiʻe, ke kūpaʻa a me ka alkali a me ka reagent, me nā waiwai kino a me nā kemika.

    Ke hoʻohālikelike ʻia me nā mea graphite maʻemaʻe kiʻekiʻe, hoʻomaka ka graphite e oxidize ma 400C, ka mea e hoʻopau ai i ka pauka ma muli o ka oxidation, ka hopena i ka pollution kaiapuni i nā ʻaoʻao peripheral a me nā keʻena māmā, a hoʻonui i nā haumia o ke kaiapuni maʻemaʻe kiʻekiʻe.

    Eia nō naʻe, hiki i ka uhi ʻana o SiC ke mālama i ke kūpaʻa kino a me ke kemika ma 1600 degere, hoʻohana nui ʻia i ka ʻoihana hou, ʻoi loa i ka ʻoihana semiconductor.

    Hāʻawi kā mākou hui i nā lawelawe kaʻina hana hoʻoheheʻe SiC ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe. e hana ana i ka papa pale SIC. Hoʻopili paʻa ʻia ka SIC i hoʻokumu ʻia i ka base graphite, e hāʻawi ana i ka graphite base i nā waiwai kūikawā, pēlā e hana ai i ka ʻili o ka graphite compact, Porosity-free, kiʻekiʻe wela ke kū ʻana, ka pale ʻana i ka corrosion a me ka pale oxidation.

    Nā hiʻohiʻona nui:

    1. Kiʻekiʻe wela oxidation kū'ē:

    ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.

    2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.

    3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.

    4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.

    ʻO nā kikoʻī nui o ka CVD-SIC Coatings:

    SiC-CVD

    ʻO ka mānoanoa

    (g/cc)

    3.21

    Ka ikaika wiliwili

    (Mpa)

    470

    Hoʻonui wela

    (10-6/K)

    4

    ʻO ke kau wela wela

    (W/mK)

    300

    Hiki ke hoolako:

    10000 ʻāpana / ʻāpana i kēlā me kēia mahina
    Puke a me ka lawe ʻana:
    Hoʻopili: Kūʻai maʻamau & ikaika
    ʻeke poli + pahu + pahu pahu + pallet
    Awa:
    Ningbo/Shenzhen/Shanghai
    Ka manawa o waena o ka hoʻomaka a i ka wā pau:

    Nui (Nā ʻāpana) 1 – 1000 >1000
    Est. Manawa(lā) 15 E kūkākūkā ʻia

     

    ʻIkepili Hui

    111

    Na Lako Hale Hana

    222

    Halekuai

    333

    Nā palapala hōʻoia

    Nā palapala hōʻoia22

    nīnau nīnau

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    Q7: Ke hōʻoiaʻiʻo nei ʻoe i ka lawe ʻana i nā huahana palekana a palekana?
    ʻAe, hoʻohana mau mākou i ka ʻeke hoʻoili kiʻekiʻe kiʻekiʻe. Hoʻohana pū mākou i ka hoʻopili pōʻino kūikawā no nā waiwai pōʻino a me nā mea hoʻopaʻa mālama anu i hōʻoia ʻia no nā mea pili wela. Hiki ke loaʻa kahi uku hou aʻe i nā mea hoʻopili kūikawā a me nā koi paʻi maʻamau.
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