ʻO ka uhi SiC i uhi ʻia oʻO ke kumu graphite no Semiconductor, ka uhi ʻana o ka silikon carbide,MOCVD Susceptor,
Pākuʻi graphite, ʻO ke kumu graphite no Semiconductor, MOCVD Susceptor, ʻO ka uhi ʻana o Silicon Carbide,
ʻO nā pōmaikaʻi kūikawā o kā mākou mau mea hoʻopili graphite i uhi ʻia ʻo SiC me ka maʻemaʻe kiʻekiʻe loa, ka uhi homogenous a me ke ola lawelawe maikaʻi loa. Loaʻa iā lākou ke kūpaʻa kemika kiʻekiʻe a me nā waiwai paʻa wela.
SiC uhi oʻO ke kumu graphite no SemiconductorHoʻopuka nā noi i kahi ʻāpana me ka maʻemaʻe maikaʻi a me ke kūʻē i ka lewa oxidizing.
Hoʻohana ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.
Nā hiʻohiʻona:
· ʻOi loa ka Thermal Shock Resistance
· Kūleʻa haʻalulu kino maikaʻi
· Kūʻē Kemika maikaʻi loa
· Maʻemaʻe Kiʻekiʻe
· Loaʻa ma ke ʻano paʻakikī
· Hoʻohana ma lalo o ka Oxidizing Atmosphere
Nā ʻano maʻamau o ka Material Graphite Base:
ʻIke ʻia ka mānoanoa: | 1.85 g/cm3 |
Ke kū'ē uila: | 11 μΩm |
ʻO ke koʻikoʻi ʻoluʻolu: | 49 MPa (500kgf/cm2) |
Paʻa Paʻa: | 58 |
lehu: | <5ppm |
ʻO ka wela wela: | 116 W/mK (100 kcal/mhr- ℃) |
Hāʻawi ke kalapona i nā mea hoʻopili a me nā ʻāpana graphite no nā reactors epitaxy i kēia manawa. Loaʻa i kā mākou kōpili nā mea hoʻopili pahu no nā ʻāpana noi a me nā LPE, nā ʻāpana pancake no LPE, CSD, a me Gemini, a me nā mea hoʻohana hoʻokahi-wafer no nā ʻāpana noi a me ASM. hāʻawi i ka hoʻolālā maikaʻi loa no kāu noi.
Nā huahana hou aku