ʻO ka uhi SiC i uhi ʻia o ka substrate Graphite no Semiconductor, ka uhi ʻana o Silicon carbide, MOCVD Susceptor

ʻO ka wehewehe pōkole:

ʻO ka uhi SiC o ka substrate Graphite no nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe maikaʻi a me ke kū'ē i ka lewa oxidizing. Hoʻohana ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.


  • Kahi i kumu:Zhejiang, Kina (Mainland)
  • Helu kumu hoʻohālike:Helu kumu hoʻohālike:
  • Huina Kemika:graphite i uhi ʻia ʻo SiC
  • Ka ikaika wiliwili:470Mpa
  • ʻO ke kau wela wela:300 W/mK
  • ʻAno maikaʻi:hemolele
  • Hana:CVD-SiC
  • Noi:Semiconductor /Photovoltaic
  • ʻAiʻa:3.21 g/cc
  • Hoʻonui wela:4 10-6/K
  • lehu: <5ppm
  • Laʻana:Loaʻa
  • HS Code:6903100000
  • Huahana Huahana

    Huahana Huahana

    ʻO ka uhi SiC i uhi ʻia oʻO ke kumu graphite no Semiconductor, ka uhi ʻana o ka silikon carbide,MOCVD Susceptor,
    Pākuʻi graphite, ʻO ke kumu graphite no Semiconductor, MOCVD Susceptor, ʻO ka uhi ʻana o Silicon Carbide,

    Hōʻike huahana

    ʻO nā pōmaikaʻi kūikawā o kā mākou mau mea hoʻopili graphite i uhi ʻia ʻo SiC me ka maʻemaʻe kiʻekiʻe loa, ka uhi homogenous a me ke ola lawelawe maikaʻi loa. Loaʻa iā lākou ke kūpaʻa kemika kiʻekiʻe a me nā waiwai paʻa wela.

    SiC uhi oʻO ke kumu graphite no SemiconductorHoʻopuka nā noi i kahi ʻāpana me ka maʻemaʻe maikaʻi a me ke kūʻē i ka lewa oxidizing.
    Hoʻohana ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.

    Hoʻopili ʻia ʻo SiC / uhi ʻia MOCVD Susceptor

    Nā hiʻohiʻona:
    · ʻOi loa ka Thermal Shock Resistance
    · Kūleʻa haʻalulu kino maikaʻi
    · Kūʻē Kemika maikaʻi loa
    · Maʻemaʻe Kiʻekiʻe
    · Loaʻa ma ke ʻano paʻakikī
    · Hoʻohana ma lalo o ka Oxidizing Atmosphere

     

    Nā ʻano maʻamau o ka Material Graphite Base:

    ʻIke ʻia ka mānoanoa: 1.85 g/cm3
    Ke kū'ē uila: 11 μΩm
    ʻO ke koʻikoʻi ʻoluʻolu: 49 MPa (500kgf/cm2)
    Paʻa Paʻa: 58
    lehu: <5ppm
    ʻO ka wela wela: 116 W/mK (100 kcal/mhr- ℃)

    Hāʻawi ke kalapona i nā mea hoʻopili a me nā ʻāpana graphite no nā reactors epitaxy i kēia manawa. Loaʻa i kā mākou kōpili nā mea hoʻopili pahu no nā ʻāpana noi a me nā LPE, nā ʻāpana pancake no LPE, CSD, a me Gemini, a me nā mea hoʻohana hoʻokahi-wafer no nā ʻāpana noi a me ASM. hāʻawi i ka hoʻolālā maikaʻi loa no kāu noi.

    Hoʻopili ʻia ʻo SiC / uhi ʻia MOCVD SusceptorHoʻopili ʻia ʻo SiC / uhi ʻia MOCVD Susceptor

    Hoʻopili ʻia ʻo SiC / uhi ʻia MOCVD SusceptorHoʻopili ʻia ʻo SiC / uhi ʻia MOCVD Susceptor

    Nā huahana hou aku

    Hoʻopili ʻia ʻo SiC / uhi ʻia MOCVD Susceptor

    ʻIkepili Hui

    111

    Na Lako Hale Hana

    222

    Halekuai

    333

    Nā palapala hōʻoia

    Nā palapala hōʻoia22

    nīnau nīnau

     


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