Hoʻohana nui ka ʻenehana Photolithography i ka hoʻohana ʻana i nā ʻōnaehana optical e hōʻike i nā hiʻohiʻona kaapuni ma nā wafer silika. ʻO ka pololei o kēia kaʻina hana e pili pono i ka hana a me ka hua o nā kaapuni hoʻohui. E like me kekahi o nā mea hana kiʻekiʻe no ka hana ʻana i ka chip, aia ka mīkini lithography a hiki i nā haneli haneli mau mea. Pono nā ʻāpana optical a me nā ʻāpana i loko o ka ʻōnaehana lithography i ka pololei kiʻekiʻe loa e hōʻoia i ka hana kaapuni a me ka pololei.SiC seramikaua hoʻohana ʻia manā ʻōpala wafera me na aniani huinahalike seramika.
Wafer chuckHāpai a hoʻoneʻe ka wafer chuck i ka mīkini lithography i ka wā o ka hoʻolaha. He mea nui ka alignment pololei ma waena o ka wafer a me ka chuck no ka hoʻopili pololei ʻana i ke kumu ma ka ʻili o ka wafer.SiC waferUa ʻike ʻia nā chucks no ko lākou māmā, ke kūlana kiʻekiʻe a me ka hoʻonui haʻahaʻa haʻahaʻa haʻahaʻa, hiki ke hōʻemi i nā ukana inertial a hoʻomaikaʻi i ka neʻe ʻana, pololei ke kūlana a me ke kūpaʻa.
ʻO ke aniani square Ceramic Ma ka mīkini lithography, he mea koʻikoʻi ka neʻe ʻana o ka neʻe ma waena o ka wafer chuck a me ke kahua mask, e pili pono ana i ka pololei o ka lithography a me ka hua. ʻO ka reflector square kahi mea nui o ka wafer chuck scanning positioning feedback ana system, a he māmā a koʻikoʻi kona mau koi. ʻOiai ʻo ka silicon carbide ceramics he mau waiwai māmā maikaʻi, paʻakikī ka hana ʻana i ia mau mea. I kēia manawa, hoʻohana nui ʻia nā mea hana e like me ka silica fused a me cordierite. Eia nō naʻe, me ka holomua o ka ʻenehana, ua hoʻokō ka poʻe loea Kina i ka hana ʻana i nā ʻano nui nui, ʻano paʻakikī, māmā loa, i hoʻopaʻa piha ʻia i nā aniani carbide ceramic square a me nā ʻāpana optical hana ʻē aʻe no nā mīkini photolithography. ʻO ka photomask, ka mea i ʻike ʻia ʻo ka aperture, e hoʻouna i ka mālamalama ma o ka mask e hana i kahi kumu ma ka mea photosensitive. Eia naʻe, ke hoʻomālamalama ka EUV i ka mask, hoʻopuka ia i ka wela, hoʻonui i ka mahana i 600 a 1000 degere Celsius, hiki ke hōʻino i ka wela. No laila, waiho pinepine ʻia kahi papa kiʻi SiC ma ka photomask. Nui nā hui ʻē aʻe, e like me ASML, ke hāʻawi nei i nā kiʻiʻoniʻoni me ka transmittance o ka ʻoi aku ma mua o 90% e hōʻemi i ka hoʻomaʻemaʻe ʻana a me ka nānā ʻana i ka wā o ka hoʻohana ʻana i ka photomask a hoʻomaikaʻi i ka pono a me nā huahana huahana o nā mīkini photolithography EUV.
ʻO ka ʻili ʻana o ka plasmaa me Deposition Photomasks, i ʻike ʻia he crosshairs, ka hana nui o ka hoʻouna ʻana i ka mālamalama ma o ka mask a hana i kahi kumu ma ka mea photosensitive. Eia naʻe, ke hoʻomālamalama ka EUV (extreme ultraviolet) i ka photomask, hoʻopuka ia i ka wela, hoʻonui i ka mahana ma waena o 600 a me 1000 degere Celsius, hiki ke hōʻino i ka wela. No laila, waiho ʻia kahi kiʻiʻoniʻoni silicon carbide (SiC) ma ka photomask e hoʻopau i kēia pilikia. I kēia manawa, nui nā hui ʻē aʻe, e like me ASML, ua hoʻomaka e hāʻawi i nā kiʻiʻoniʻoni me ka ʻoi aku o ka 90% e hōʻemi i ka pono o ka hoʻomaʻemaʻe a me ka nānā ʻana i ka wā o ka hoʻohana ʻana i ka photomask, a laila e hoʻomaikaʻi ai i ka pono a me nā huahana huahana o nā mīkini lithography EUV. . Plasma Etching a meHoʻopaʻa ʻia ke apoa me nā mea ʻē aʻe I ka hana semiconductor, hoʻohana ke kaʻina hana etch i nā etchants wai a i ʻole gas (e like me nā kinoea fluorine-containing) i loko o ka plasma no ka hoʻokuʻu ʻana i ka wafer a koho koho i nā mea i makemake ʻole ʻia a waiho ʻia ke ʻano kaapuni i makemake ʻia ma ka.waferʻilikai. ʻO ka ʻokoʻa, ʻano like ka waiho ʻana o nā kiʻiʻoniʻoni lahilahi me ka ʻaoʻao hope o ka etching, me ka hoʻohana ʻana i ke ʻano deposition e hoʻopaʻa i nā mea insulating ma waena o nā papa metala e hana i kahi kiʻiʻoniʻoni lahilahi. Ma muli o ka hoʻohana ʻana o nā kaʻina ʻelua i ka ʻenehana plasma, ua maʻalahi lākou i nā hopena corrosive ma nā keʻena a me nā ʻāpana. No laila, pono nā ʻāpana i loko o nā mea hana i ke kūpaʻa plasma maikaʻi, ka haʻahaʻa haʻahaʻa i nā kinoea etching fluorine, a me ka conductivity haʻahaʻa. Hana ʻia nā mea hana kuʻuna etching a me deposition, e like me nā apo kiko, i nā mea e like me ke silicon a i ʻole quartz. Eia nō naʻe, me ka holomua o ka miniaturization circuit circuit, ke piʻi nei ka koi a me ka mea nui o nā kaʻina hana etching i ka hana circuit circuit. Ma ka pae microscopic, pono ke kiʻi ʻana i ka wafer silicon pololei i ka plasma ikehu kiʻekiʻe e hoʻokō ai i nā laula laina liʻiliʻi a me nā hale hana paʻakikī. No laila, ua lilo ʻo chemical vapor deposition (CVD) silicon carbide (SiC) i mea hoʻopili i makemake ʻia no ka etching a me ka deposition lako me kāna mau waiwai kino a me kemika, kiʻekiʻe ka maʻemaʻe a me ka like. I kēia manawa, ʻo nā ʻāpana carbide silicon CVD i nā mea hana etching me nā apo kiko, nā poʻo ʻauʻau kinoea, nā pā a me nā apo lihi. I nā lako deposition, aia nā uhi keʻena, nā laina lumi a me nāNā pani graphite i uhi ʻia e SIC.
Ma muli o kona haʻahaʻa haʻahaʻa a me ka conductivity i ka chlorine a me ka fluorine etching kinoea,CVD silikon carbideua lilo i mea kūpono no nā ʻāpana e like me nā apo kiko i nā lako etching plasma.CVD silikon carbideʻO nā mea i loko o nā mea hana etching me nā apo kiko, nā poʻo wai hau, nā pā, nā apo lihi, a me nā mea ʻē aʻe. Ma ka hoʻohana ʻana i ka volta i ke apo, hoʻopaʻa ʻia ka plasma ma o ke apo ma luna o ka wafer, e hoʻomaikaʻi ana i ka kūlike o ke kaʻina hana. ʻO ka mea maʻamau, hana ʻia nā apo kiko i ke silikoni a i ʻole quartz. Eia nō naʻe, i ka holomua ʻana o ka miniaturization circuit circuit, ke hoʻomau nei ka piʻi ʻana o ke koi a me ke koʻikoʻi o nā kaʻina hana etching. Ke hoʻomau nei ka piʻi ʻana o ka mana etching plasma a me nā koi o ka ikehu, ʻoi aku ka nui o ka capacitively coupled plasma (CCP) etching equipment, e koi ana i ka ikehu plasma kiʻekiʻe. ʻO ka hopena, ke hoʻonui nei ka hoʻohana ʻana i nā apo kiko i hana ʻia me nā mea carbide silicon.
Ka manawa hoʻouna: Oct-29-2024