ʻO kahi ala hou e hoʻopili pū ai i nā papa o nā semiconductor e like me ka lahilahi e like me nā nanometer ʻaʻole i loaʻa i kahi ʻike ʻepekema wale nō akā he ʻano transistor hou no nā mea uila mana kiʻekiʻe. ʻO ka hopena, i paʻi ʻia ma Applied Physics Letters, ua hoʻāla i ka hoihoi nui.
ʻO ka hopena ka hopena o ka pilina pili ma waena o nā ʻepekema ma Linköping University a me SweGaN, kahi hui spin-off mai ka noiʻi ʻepekema waiwai ma LiU. Hana ka hui i nā ʻāpana uila mai ka gallium nitride.
ʻO Gallium nitride, GaN, he semiconductor i hoʻohana ʻia no nā diodes māmā. Hiki nō naʻe ke hoʻohana i nā noi ʻē aʻe, e like me nā transistors, no ka mea hiki iā ia ke pale i nā mahana kiʻekiʻe a me nā ikaika o kēia manawa ma mua o nā semiconductors ʻē aʻe. He mau waiwai nui kēia no nā ʻāpana uila e hiki mai ana, ʻaʻole liʻiliʻi loa no nā mea i hoʻohana ʻia i nā kaʻa uila.
Ua ʻae ʻia ka mahu o Gallium nitride e hoʻokuʻu ma luna o kahi wafer silicon carbide, e hana ana i kahi uhi lahilahi. ʻO ke ʻano o ka ulu ʻana o kekahi mea crystalline ma luna o kahi substrate o kekahi mea i kapa ʻia ʻo "epitaxy." Hoʻohana pinepine ʻia ke ʻano i ka ʻoihana semiconductor mai ka hāʻawi ʻana i ke kūʻokoʻa nui i ka hoʻoholo ʻana i ke ʻano aniani a me ke ʻano kemika o ke kiʻi nanometer i hoʻokumu ʻia.
ʻO ka hui pū ʻana o ka gallium nitride, GaN, a me ka silicon carbide, SiC (ʻo ia mau mea ʻelua ke kū i nā māla uila ikaika), e hōʻoia i ka kūpono o nā kaapuni no nā noi e pono ai nā mana kiʻekiʻe.
ʻO ke kūpono ma ka ʻili ma waena o nā mea crystalline ʻelua, gallium nitride a me silicon carbide, akā, ʻilihune. Hoʻopau like ʻole nā atoms me kekahi i kekahi, e alakaʻi ana i ka hemahema o ka transistor. Ua ʻōlelo ʻia kēia e ka noiʻi, a ma hope i alakaʻi ʻia i kahi hopena pāʻoihana, kahi i kau ʻia ai kahi ʻāpana ʻoi aku ka lahilahi o ka nitride aluminika ma waena o nā papa ʻelua.
Ua ʻike ka poʻe ʻenekinia ma SweGaN i hiki i kā lākou transistors ke hoʻokō i nā ikaika o ke kahua kiʻekiʻe ma mua o kā lākou i manaʻo ai, a ʻaʻole hiki iā lākou ke hoʻomaopopo mua i ke kumu. Hiki ke loaʻa ka pane ma ka pae atomic - i loko o kekahi mau wahi koʻikoʻi koʻikoʻi i loko o nā ʻāpana.
ʻO nā mea noiʻi ma LiU a me SweGaN, alakaʻi ʻia e LiU's Lars Hultman a me Jun Lu, aia i loko o Applied Physics Letters kahi wehewehe ʻana o ka hanana, a wehewehe i ke ʻano o ka hana ʻana i nā transistors me ka hiki ke kū i nā volta kiʻekiʻe.
Ua ʻike ka poʻe ʻepekema i kahi ʻano hana ulu epitaxial i ʻike ʻole ʻia i kapa ʻia e lākou ʻo "transmorphic epitaxial growth." ʻO ia ke kumu o ka hoʻopaʻa ʻana ma waena o nā papa ʻokoʻa e hoʻomoʻi mālie ʻia ma nā papa ʻelua o nā mana. ʻO ia ke ʻano hiki iā lākou ke ulu i nā papa ʻelua, gallium nitride a me alumini nitride, ma ka silicon carbide ma ke ʻano e hoʻomalu ai i ka pae atomika pehea e pili ai nā papa i kekahi i kekahi i ka mea. I loko o ke keʻena hoʻokolohua ua hōʻike lākou i ka mea kū i nā volta kiʻekiʻe, a hiki i ka 1800 V. Inā hoʻokomo ʻia kēlā ʻano uila ma luna o kahi ʻāpana kumu silika maʻamau, e hoʻomaka ana ka lele ʻana a e luku ʻia ka transistor.
"Hoʻomaikaʻi mākou iā SweGaN i ko lākou hoʻomaka ʻana e kūʻai aku i ka mea hou. Hōʻike ia i ka hui pū ʻana a me ka hoʻohana ʻana i nā hopena noiʻi i loko o ke kaiāulu. Ma muli o ka pili pili ʻana i loaʻa iā mākou me kā mākou mau hoa hana i kēia manawa e hana nei no ka ʻoihana, he hopena wikiwiki kā mākou noiʻi ma waho o ka honua kula, "wahi a Lars Hultman.
Nā mea i hāʻawi ʻia e Linköping University. Na Monica Westman Svenselius i kākau mua. Nānā: Hiki ke hoʻoponopono ʻia ka ʻike no ke ʻano a me ka lōʻihi.
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Ka manawa hoʻouna: Mei-11-2020