Welina mai i kā mākou pūnaewele no ka ʻike huahana a me ke kūkākūkā.
ʻO kā mākou pūnaewele:https://www.vet-china.com/
Ke hoʻomau nei nā kaʻina hana semiconductor i ka holomua ʻana, kahi ʻōlelo kaulana i kapa ʻia ʻo "Moore's Law" ua hoʻolaha ʻia i ka ʻoihana. Ua noi ʻia e Gordon Moore, kekahi o nā mea hoʻokumu o Intel, i ka makahiki 1965. ʻO kāna ʻike kumu: ʻo ka helu o nā transistors hiki ke hoʻokomo ʻia ma kahi kaapuni hoʻohui e pālua ʻia ma kahi o kēlā me kēia 18 a 24 mau mahina. ʻAʻole kēia kānāwai he loiloi a me ka wānana o ka ulu ʻana o ka ʻoihana, akā he mea hoʻoikaika hoʻi no ka hoʻomohala ʻana i nā kaʻina hana semiconductor - nā mea āpau e hana i nā transistors me ka liʻiliʻi a me ka hana paʻa. Mai ka makahiki 1950 a hiki i kēia manawa, ma kahi o 70 mau makahiki, ua hoʻomohala ʻia ka huina o BJT, MOSFET, CMOS, DMOS, a me nā ʻenehana kaʻina hana hybrid BiCMOS a me BCD.
1. BJT
ʻO ka bipolar junction transistor (BJT), i ʻike mau ʻia he triode. ʻO ke kahe o ka uku i ka transistor ma muli o ka diffusion a me ka neʻe ʻana o nā mea lawe ma ka hui PN. No ka mea e pili ana i ke kahe o nā electrons a me nā lua, ua kapa ʻia ʻo ia he mea bipolar.
Ke nānā nei i hope i ka moʻolelo o kona hānau ʻana. Ma muli o ka manaʻo o ka hoʻololi ʻana i nā triodes vacuum me nā amplifiers paʻa, ua manaʻo ʻo Shockley e hoʻokō i ka noiʻi kumu ma nā semiconductor i ke kauwela o 1945. Ma ka hapa lua o 1945, ua hoʻokumu ʻo Bell Labs i kahi hui noiʻi physics solid-state i alakaʻi ʻia e Shockley. I loko o kēia pūʻulu, ʻaʻole wale nā physicists, akā ʻo nā ʻenekinia kaapuni a me nā chemists, me Bardeen, he physicist theoretical, a me Brattain, he physicist hoʻokolohua. I Kekemapa 1947, ua hana maikaʻi ʻia kahi hanana i manaʻo ʻia he milestone e nā hanauna ma hope - ua hana maikaʻi ʻo Bardeen lāua ʻo Brattain i ka transistor point-contact germanium mua o ka honua me ka hoʻonui ʻana i kēia manawa.
ʻO Bardeen lāua ʻo Brattain ka transistor kiko-hoʻopili mua
Ma hope koke iho, hoʻokumu ʻo Shockley i ka transistor hui bipolar i ka makahiki 1948. Ua manaʻo ʻo ia e hiki ke haku ʻia ka transistor i ʻelua hui pn, hoʻokahi ʻaoʻao i mua a ʻo kekahi ʻaoʻao hoʻohuli, a loaʻa iā ia kahi patent i Iune 1948. I ka makahiki 1949, hoʻopuka ʻo ia i ka manaʻo kikoʻī. o ka hana ana o ka transistor hui. ʻOi aku ma mua o ʻelua makahiki ma hope, ua hoʻomohala nā ʻepekema a me nā ʻenekinia ma Bell Labs i kahi kaʻina hana e hoʻokō ai i ka hana nui o nā transistors junction (milestone ma 1951), e wehe ana i kahi au hou o ka ʻenehana uila. No ka hoʻomaopopo ʻana i kā lākou hāʻawi ʻana i ka mea i hana ʻia o nā transistors, ua lanakila pū ʻo Shockley, Bardeen a me Brattain i ka 1956 Nobel Prize in Physics.
Hoʻolālā maʻalahi o ka NPN bipolar junction transistor
E pili ana i ke ʻano o nā transistors hui bipolar, nā BJT maʻamau ʻo NPN a me PNP. Hōʻike ʻia ka kikoʻī kikoʻī i loko o ke kiʻi ma lalo nei. ʻO ka'āpana semiconductor haumia e pili ana i ka emitter ka'āpana emitter, he kiʻekiʻe ka manaʻo doping; ʻo ka ʻāpana semiconductor haumia e pili ana i ke kumu, ʻo ia ka ʻāina kumu, he ākea lahilahi loa a he haʻahaʻa haʻahaʻa doping; ʻo ka ʻāpana semiconductor haumia e pili ana i ka ʻohi ʻohi, ʻo ia ka ʻāina ʻohi, nona kahi ʻāpana nui a haʻahaʻa haʻahaʻa loa.
ʻO nā mea maikaʻi o ka ʻenehana BJT ʻo ia ka wikiwiki pane kiʻekiʻe, transconductance kiʻekiʻe (hoʻololi nā hoʻololi uila komo i nā loli nui o kēia manawa), haʻahaʻa haʻahaʻa, kiʻekiʻe analog pololei, a me ka mana hoʻokele ikaika o kēia manawa; ʻo nā hemahema ka hoʻohui haʻahaʻa (ʻaʻole hiki ke hoʻemi ʻia ka hohonu kū pololei me ka nui lateral) a me ka hoʻohana mana kiʻekiʻe.
2. MOS
ʻO Metal Oxide Semiconductor Field Effect Transistor (Metal Oxide Semiconductor FET), ʻo ia hoʻi, he transistor hopena kahua e hoʻomalu i ka hoʻololi o ka semiconductor (S) conductive channel ma o ka hoʻopili ʻana i ka uila i ka puka o ka papa metala (M-metal aluminika) a me ka kumu ma o ka papa oxide (O-insulating layer SiO2) e hoʻopuka i ka hopena o ke kahua uila. No ka mea ua hoʻokaʻawale ʻia ka ʻīpuka a me ke kumu, a me ka ʻīpuka a me ka ʻauwai e ka SiO2 insulating layer, ua kapa ʻia ʻo MOSFET he transistor hopena pānaʻi insulated. I ka makahiki 1962, ua hoʻolaha kūkala ʻo Bell Labs i ka hoʻomohala kūleʻa, i lilo i mea nui loa i ka mōʻaukala o ka hoʻomohala semiconductor a ua kau pololei i ke kumu ʻenehana no ka hiki ʻana mai o ka hoʻomanaʻo semiconductor.
Hiki ke hoʻokaʻawale ʻia ka MOSFET i ke kahawai P a me ke kahawai N e like me ke ʻano o ke kahawai conductive. E like me ka amplitude voltage puka, hiki ke hoʻokaʻawale ʻia i: ʻano depletion-inā ʻaʻole ka volta o ka puka, aia kahi ala conductive ma waena o ke kahawai a me ke kumu; ʻano hoʻonui ʻano-no nā hāmeʻa N (P), aia kahi ala conductive wale nō ke ʻoi aku ka nui o ka volta puka ma mua o (emi ma mua o) zero, a ʻo ka MOSFET ka mana ka nui o ka N channel hoʻonui ʻano.
ʻO nā ʻokoʻa nui ma waena o MOS a me triode e komo akā ʻaʻole i kaupalena ʻia i kēia mau helu:
-ʻO nā triodes nā mea bipolar no ka mea ʻo ka hapa nui a me nā mea lawe liʻiliʻi e komo i ka conduction i ka manawa like; ʻoiai ʻo MOS wale nō ke alakaʻi i ka uila ma o ka hapa nui o nā mea lawe i nā semiconductors, a ua kapa ʻia hoʻi he transistor unipolar.
-ʻO nā Triodes nā mea hoʻohana i kēia manawa me ka hoʻohana mana kiʻekiʻe; ʻoiai ʻo MOSFET he mau mea hoʻohana i ka uila me ka haʻahaʻa haʻahaʻa.
- He nui ke kū'ēʻana o nā Triodes, aʻo nā paipu MOS he liʻiliʻi ke kū'ē, he mau haneli miliona wale nō. I nā ʻenehana uila o kēia manawa, hoʻohana mau ʻia nā paipu MOS ma ke ʻano he hoʻololi, no ka mea ʻoi aku ka kiʻekiʻe o ka pono o MOS i hoʻohālikelike ʻia me nā triodes.
- He kumukūʻai maikaʻi loa nā Triodes, a ʻoi aku ka pipiʻi o nā paipu MOS.
-I kēia mau lā, hoʻohana ʻia nā paipu MOS e pani i nā triodes i ka hapa nui o nā hiʻohiʻona. Ma kekahi mau hiʻohiʻona haʻahaʻa haʻahaʻa a i ʻole ka mana-insensitive, e hoʻohana mākou i nā triodes e noʻonoʻo ana i ka pono o ke kumukūʻai.
3. CMOS
Hoʻohana ʻia ka ʻenehana CMOS i nā transistors semiconductor semiconductor (MOSFET) hoʻohui i nā ʻano p-type a me n-type no ke kūkulu ʻana i nā mea uila a me nā kaapuni loina. Hōʻike kēia kiʻi i kahi mea hoʻohuli CMOS maʻamau, i hoʻohana ʻia no ka hoʻololi ʻana "1→0" a i ʻole "0→1".
ʻO ke kiʻi ma lalo nei he ʻāpana ʻāpana CMOS maʻamau. ʻO ka ʻaoʻao hema ʻo NMS, a ʻo ka ʻaoʻao ʻākau he PMOS. Hoʻohui pū ʻia nā pou G o nā MOS ʻelua ma ke ʻano he puka komo maʻamau, a ua hoʻopili pū ʻia nā pou D ma ke ʻano he puka hoʻoheheʻe maʻamau. Hoʻopili ʻia ʻo VDD i ke kumu o PMOS, a pili ʻo VSS i ke kumu o NMOS.
I ka makahiki 1963, ua hana ʻo Wanlass lāua ʻo Sah o Fairchild Semiconductor i ke kaapuni CMOS. I ka makahiki 1968, ua hoʻokumu ka American Radio Corporation (RCA) i ka huahana CMOS integrated circuit mua, a mai ia manawa, ua loaʻa i ka CMOS circuit ka hoʻomohala nui. ʻO kāna mau mea maikaʻi he haʻahaʻa haʻahaʻa a me ka hoʻohui kiʻekiʻe (hiki i ke kaʻina STI / LOCOS ke hoʻomaikaʻi hou i ka hoʻohui); ʻO kona hemahema ka loaʻa ʻana o kahi hopena laka (hoʻohana ʻia ʻo PN junction reverse bias ma ke ʻano he kaʻawale ma waena o nā paipu MOS, a hiki i ka interference ke hana maʻalahi i kahi loop i hoʻonui ʻia a puhi i ke kaapuni).
4. DMOS
Pālua-Diffused Metal Oxide Semiconductor: E like me ke ʻano o nā mea MOSFET maʻamau, loaʻa iā ia ke kumu, ka wai, ka ʻīpuka a me nā electrodes ʻē aʻe, akā kiʻekiʻe ke kiʻekiʻe o ka puʻupuʻu o ka hopena. Hoʻohana ʻia ke kaʻina diffusion pālua.
Hōʻike ka kiʻi ma lalo i ka ʻāpana keʻa o kahi DMOS maʻamau N-channel. Hoʻohana mau ʻia kēia ʻano mea DMOS i nā noi hoʻololi ʻaoʻao haʻahaʻa, kahi e pili ai ke kumu o ka MOSFET i ka honua. Eia kekahi, aia kahi DMOS P-channel. Hoʻohana mau ʻia kēia ʻano mea DMOS i nā noi hoʻololi ʻaoʻao kiʻekiʻe, kahi i hoʻopili ʻia ai ke kumu o ka MOSFET i kahi volta maikaʻi. E like me CMOS, hoʻohana nā polokalamu DMOS hoʻohui i nā MOSFET N-channel a me P-channel ma ka pahu hoʻokahi e hāʻawi i nā hana hoʻololi hoʻohui.
Ma muli o ke kuhikuhi o ke kahawai, hiki ke hoʻokaʻawale ʻia ka DMOS i ʻelua ʻano, ʻo ia ka vertical double-diffused metal oxide semiconductor field effect transistor VDMOS (Vertical Double-Diffused MOSFET) a me lateral double-diffused metal oxide semiconductor field effect transistor LDMOS (Lateral Double. - MOSFET hoʻolaha ʻia).
Hoʻolālā ʻia nā hāmeʻa VDMOS me kahi kahawai kūpaʻa. Ke hoʻohālikelike ʻia me nā ʻaoʻao DMOS lateral, loaʻa iā lākou ke kiʻekiʻe kiʻekiʻe o ka haʻihaʻi haʻahaʻa a me ka hiki ke hoʻohana i kēia manawa, akā ʻoi aku ka nui o ke kū'ē.
Hoʻolālā ʻia nā hāmeʻa LDMOS me kahi kahawai ʻaoʻao a he mau mana asymmetric MOSFET. Hoʻohālikelike ʻia me nā hāmeʻa DMOS kūpaʻa, ʻae lākou i ka haʻahaʻa haʻahaʻa a me ka wikiwiki o ka hoʻololi ʻana.
Ke hoʻohālikelike ʻia me nā MOSFET maʻamau, ʻoi aku ka kiʻekiʻe o ka DMOS i ka capacitance a me ka haʻahaʻa haʻahaʻa, no laila hoʻohana nui ʻia i nā mea uila uila kiʻekiʻe e like me nā hoʻololi mana, nā mea hana mana a me nā kaʻa kaʻa uila.
5. BiCMOS
ʻO Bipolar CMOS kahi ʻenehana e hoʻohui i ka CMOS a me nā mea bipolar ma ka pahu hoʻokahi i ka manawa like. ʻO kona manaʻo kumu, ʻo ia ka hoʻohana ʻana i nā mea CMOS ma ke ʻano he kaapuni ʻāpana nui, a hoʻohui i nā mea bipolar a i ʻole nā kaapuni kahi e koi ʻia ai nā ukana capacitive nui. No laila, loaʻa i nā kaapuni BiCMOS nā pono o ka hoʻohui kiʻekiʻe a me ka hoʻohana haʻahaʻa haʻahaʻa o nā kaapuni CMOS, a me nā pono o ka wikiwiki kiʻekiʻe a me nā mana hoʻokele ikaika o nā kaʻa BJT.
Hoʻohui ka ʻenehana STMicroelectronics 'BiCMOS SiGe (silicon germanium) i ka RF, analog a me nā ʻāpana kikohoʻe ma kahi pahu hoʻokahi, hiki ke hōʻemi nui i ka helu o nā ʻāpana o waho a me ka hoʻohana ʻana i ka mana.
6. BCD
ʻO Bipolar-CMOS-DMOS, hiki i kēia ʻenehana ke hana i nā mea bipolar, CMOS a me DMOS ma ka pahu hoʻokahi, i kapa ʻia ke kaʻina BCD, i hoʻomohala mua ʻia e STMicroelectronics (ST) i ka makahiki 1986.
He kūpono ʻo Bipolar no nā kaapuni analog, kūpono ʻo CMOS no nā kaapuni kikohoʻe a me ka logic, a ua kūpono ʻo DMOS no nā mana a me nā mea uila kiʻekiʻe. Hoʻohui ʻo BCD i nā pono o nā ʻekolu. Ma hope o ka hoʻomaikaʻi mau ʻana, hoʻohana nui ʻia ʻo BCD i nā huahana ma ke kahua o ka hoʻokele mana, ka loaʻa ʻana o ka ʻikepili analog a me nā mea hana mana. Wahi a ko ST's official website, ʻo ke kaʻina hana oʻo no BCD aia ma kahi o 100nm, 90nm aia nō i ka prototype design, a ʻo ka ʻenehana 40nmBCD no kāna mau huahana e hiki mai ana ma lalo o ka hoʻomohala ʻana.
Ka manawa hoʻouna: Sep-10-2024