ʻO kā mākou mau ʻimi mau ʻo ke ʻano o ka "manaʻo i ka mākeke, e nānā i ka maʻamau, e nānā i ka ʻepekema" a me ke kumumanaʻo o ka "maikaʻi i ke kumu, hilinaʻi i ka mua a me ka hoʻokele ʻana i ka holomua" no ka Manufactur standard.ʻO Silicon Carbide (sic) Cantiliver BeamNo ka Coating Polycrystalline Silicon Wafers, ʻOiai e hoʻohana ana i ka hoʻomaikaʻi ʻana o ke kaiāulu a me ka hoʻokele waiwai, e paʻa kā mākou ʻoihana i kahi ʻōlelo o "Focus on trust, high quality the first", ʻoi aku, ke manaʻo nei mākou e hana i kahi holo lōʻihi nani me kēlā me kēia mea kūʻai.
ʻO kā mākou ʻimi mau loa ʻo ia ke ʻano o ka "manaʻo i ka mākeke, mālama i ka maʻamau, mālama i ka ʻepekema" a me ke kumumanaʻo o "ka maikaʻi ke kumu, hilinaʻi i ka mea mua a me ka hoʻokele waiwai"ʻO Sic Cantiliver Beam, ʻO Silicon Carbide (sic) Cantiliver Beam, ʻO Silicon Carbide Cantiliver hoe, Ke hoʻonui nei mākou i kā mākou māhele mākeke honua e pili ana i nā mea kūʻai maikaʻi, ka lawelawe maikaʻi loa, ke kumukūʻai kūpono a me ka hāʻawi ʻana i ka manawa. E hoʻomanaʻo e hoʻokaʻaʻike mai iā mākou i kēlā me kēia manawa no ka ʻike hou aku.
ʻO ka uhi SiC o ka substrate Graphite no nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe maikaʻi a me ke kū'ē i ka lewa oxidizing.
Hoʻohana ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.
Nā hiʻohiʻona:
· ʻOi loa ka Thermal Shock Resistance
· Kūleʻa haʻalulu kino maikaʻi
· Kūʻē Kemika maikaʻi loa
· Maʻemaʻe Kiʻekiʻe
· Loaʻa ma ke ʻano paʻakikī
· Hoʻohana ma lalo o ka Oxidizing Atmosphere
Nā ʻano maʻamau o ka Material Graphite Base:
ʻIke ʻia ka mānoanoa: | 1.85 g/cm3 |
Ke kū'ē uila: | 11 μΩm |
ʻO ke koʻikoʻi ʻoluʻolu: | 49 MPa (500kgf/cm2) |
Paʻa Paʻa: | 58 |
lehu: | <5ppm |
ʻO ka wela wela: | 116 W/mK (100 kcal/mhr- ℃) |
Q1: He aha kāu mau kumukūʻai?
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