Ke hilinaʻi nei mākou i ka noʻonoʻo hoʻolālā, ka hoʻololi mau ʻana i nā ʻāpana āpau, nā holomua ʻenehana a ʻoiaʻiʻo hoʻi ma luna o kā mākou limahana e komo pololei i kā mākou kūleʻa no Good Quality China RP HP UHPNā Electrodes Graphite no ka hana ʻana o Silicon Carbide, Manaʻo mākou e hauʻoli ana ʻoe i kā mākou kumukūʻai kūʻai kūpono, nā hopena maikaʻi loa a me ka lawe wikiwiki ʻana. Manaʻolana mākou e hiki iā ʻoe ke hāʻawi iā mākou i kahi manawa e hāʻawi iā ʻoe a lilo i hoa maikaʻi loa nou!
Ke hilinaʻi nei mākou i ka noʻonoʻo hoʻolālā, ka hoʻololi mau ʻana i nā ʻāpana āpau, ka holomua ʻenehana a ʻoiaʻiʻo hoʻi ma luna o kā mākou limahana e komo pololei i kā mākou kūleʻa noKina graphite Electrode, Nā Electrodes Graphite no ka hana ʻana o Silicon Carbide, Loaʻa iā mākou nā pilina pili maikaʻi me nā mea hana maikaʻi he nui i hiki iā mākou ke hāʻawi aku i nā ʻāpana kaʻa āpau a me ka lawelawe ma hope o ke kūʻai aku me ke kūlana kiʻekiʻe kiʻekiʻe, haʻahaʻa haʻahaʻa haʻahaʻa a me ka lawelawe ʻoluʻolu e hoʻokō i nā koi o nā mea kūʻai mai nā kula like ʻole a me nā wahi like ʻole.
Loaʻa i ka uhi CVD-SiC nā hiʻohiʻona o ke ʻano like ʻole, nā mea paʻa, ke kūpaʻa wela kiʻekiʻe, ke kūpaʻa ʻana o ka oxidation, ka maʻemaʻe kiʻekiʻe, ke kūpaʻa a me ka alkali a me ka reagent, me nā waiwai kino a me nā kemika.
Ke hoʻohālikelike ʻia me nā mea graphite maʻemaʻe kiʻekiʻe, hoʻomaka ka graphite e oxidize ma 400C, ka mea e hoʻopau ai i ka pauka ma muli o ka oxidation, ka hopena i ka pollution kaiapuni i nā ʻaoʻao peripheral a me nā keʻena māmā, a hoʻonui i nā haumia o ke kaiapuni maʻemaʻe kiʻekiʻe.
Eia nō naʻe, hiki i ka uhi ʻana o SiC ke mālama i ke kūpaʻa kino a me ke kemika ma 1600 degere, hoʻohana nui ʻia i ka ʻoihana hou, ʻoi loa i ka ʻoihana semiconductor.
Hāʻawi kā mākou hui i nā lawelawe kaʻina hana hoʻoheheʻe SiC ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe. e hana ana i ka papa pale SIC. ʻO ka SIC i hoʻokumuʻia ua paʻa paʻa i ka graphite base, e hāʻawi ana i ka graphite base waiwai kūikawā, pēlā e hana ai i kaʻili o ka graphite compact, Porosity-free, kiʻekiʻe o ka mahana wela, ke kū'ēʻana a me ke kū'ēʻana.
Nā hiʻohiʻona nui:
1. Kiʻekiʻe wela oxidation kū'ē:
ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.
2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.
3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.
4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.
ʻO nā kikoʻī nui o ka CVD-SIC Coatings:
SiC-CVD | ||
ʻO ka mānoanoa | (g/cc)
| 3.21 |
Ka ikaika wiliwili | (Mpa)
| 470 |
Hoʻonui wela | (10-6/K) | 4
|
ʻO ke kau wela wela | (W/mK) | 300 |
Hiki ke hoolako:
10000 ʻāpana / ʻāpana i kēlā me kēia mahina
Puke a me ka lawe ʻana:
Hoʻopili: Kūʻai maʻamau & ikaika
ʻeke poli + pahu + pahu pahu + pallet
Awa:
Ningbo/Shenzhen/Shanghai
Ka manawa o waena o ka hoʻomaka a i ka wā pau:
Nui (Nā ʻāpana) | 1 – 1000 | >1000 |
Est. Manawa(lā) | 15 | E kūkākūkā ʻia |
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