ʻO ke ʻano ʻEulopa no Kina Sic Silicon Carbinde 15-17um CAS # 409-21-2 no ka hoʻoheheʻe ʻana a me ka hawewe Electromagnetic.

ʻO ka wehewehe pōkole:


  • Kahi i kumu:Zhejiang, Kina (Mainland)
  • Helu kumu hoʻohālike:Waapa3002
  • Huina Kemika:graphite i uhi ʻia ʻo SiC
  • Ke kū'ē uila:11 μΩm
  • Paʻa Paʻa: 58
  • ʻO ka wela wela:116 W/mK (100 kcal/mhr- ℃)
  • Laʻana:Loaʻa
  • HS Code:6903100000
  • Kapa inoa:VET
  • ʻAiʻa:1.85 g/cm3
  • Ka ikaika flexural:49 MPa
  • lehu: <5ppm
  • ʻAno maikaʻi:hemolele
  • Noi:Semiconductor /Photovoltaic
  • Huahana Huahana

    Huahana Huahana

    Me kēia huaʻōlelo i ka noʻonoʻo, ua lilo mākou i kekahi o nā mea hana ʻenehana hou loa, ʻoi aku ka maikaʻi, a me nā kumu hoʻokūkū hoʻokūkū no ke ʻano ʻEulopa no Kina Sic Silicon Carbinde 15-17um CAS # 409-21-2 no Radiation. a me ka Electromagnetic Wave Absorption, Quality ka 'ola o ka hale hana, ʻO ka nānā ʻana i ka koi o ka mea kūʻai aku ke kumu o ke ola ʻana a me ka hoʻomohala ʻana o ka ʻoihana, pili mākou i ʻO ka ʻoiaʻiʻo a me ka manaʻo maikaʻi o ka hana ʻana, e kali ana i kou hele ʻana mai!
    Me kēia huaʻōlelo i ka noʻonoʻo, ua lilo mākou i kekahi o nā mea hana ʻenehana ʻoi loa, ʻoi aku ka maikaʻi o ke kumu kūʻai, a me ka hoʻokūkū hoʻokūkū noʻO Kina ʻeleʻele ʻeleʻele paʻa, ʻO ka Wafer Silicon Carbide, Ma ke ʻano he limahana i hoʻonaʻauao maikaʻi ʻia, ʻano hou a ikaika hoʻi, iā mākou ke kuleana no nā mea āpau o ka noiʻi, hoʻolālā, hana ʻana, kūʻai aku a hāʻawi. Me ke aʻo ʻana a me ka hoʻomohala ʻana i nā ʻenehana hou, ʻaʻole mākou e hahai wale akā alakaʻi pū i ka ʻoihana hana. Hoʻolohe pono mākou i nā manaʻo mai kā mākou mea kūʻai aku a hāʻawi i ke kamaʻilio koke. E ʻike koke ʻoe i kā mākou ʻike a me ka lawelawe hoʻolohe.

    Hōʻike huahana

    ʻO ka uhi SiC o ka substrate Graphite no nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe maikaʻi a me ke kū'ē i ka lewa oxidizing.
    Hoʻohana ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.

    Hoʻopili ʻia ʻo SiC / uhi ʻia MOCVD Susceptor

    Nā hiʻohiʻona:
    · ʻOi loa ka Thermal Shock Resistance
    · Kūleʻa haʻalulu kino maikaʻi
    · Kūʻē Kemika maikaʻi loa
    · Maʻemaʻe Kiʻekiʻe
    · Loaʻa ma ke ʻano paʻakikī
    · Hoʻohana ma lalo o ka Oxidizing Atmosphere

    Nā ʻano maʻamau o ka Material Graphite Base:

    ʻIke ʻia ka mānoanoa: 1.85 g/cm3
    Ke kū'ē uila: 11 μΩm
    ʻO ke koʻikoʻi ʻoluʻolu: 49 MPa (500kgf/cm2)
    Paʻa Paʻa: 58
    lehu: <5ppm
    ʻO ka wela wela: 116 W/mK (100 kcal/mhr- ℃)

    ʻIkepili Hui

    111

    Na Lako Hale Hana

    222

    Halekuai

    333

    Nā palapala hōʻoia

    Nā palapala hōʻoia22

    nīnau nīnau

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