Mālama ka ʻoihana i ka manaʻo o "E No.1 i ke kūlana kiʻekiʻe, e hoʻokumu ʻia i ka hōʻaiʻē a me ka hilinaʻi no ka ulu ʻana", e hoʻomau i ka lawelawe mua a me nā mea hou mai ka home a me nā ʻāina ʻē a pau no ka hale hana Kina no Kina Heat Treatment Furnace. , Tube-1200 Lab Tubular Vacuum Furnace for Experiment, Ua hauʻoli mākou i ka hoʻomohala mau ʻana me ke kōkua ikaika a lōʻihi o kā mākou mea kūʻai hauʻoli!
Ke kākoʻo nei ka ʻoihana i ka manaʻo o "E No.Uhi Puu Haole o Kina, Puka Puka Puka, ʻO kā mākou pahuhopu "ʻo ka hoʻolako ʻana i nā waiwai hana mua a me ka lawelawe maikaʻi loa no kā mākou mea kūʻai aku, no laila ke maopopo nei mākou e loaʻa iā ʻoe kahi pōmaikaʻi ma o ka hui pū ʻana me mākou". Inā makemake ʻoe i kekahi o kā mākou hāʻina a makemake paha e kūkākūkā i kahi kauoha maʻamau, e ʻoluʻolu e hoʻokaʻaʻike mai iā mākou. Ke kakali nei mākou i ka hoʻokumu ʻana i nā pilina ʻoihana kūleʻa me nā mea kūʻai aku hou a puni ka honua i ka wā e hiki mai ana.
ʻO ka uhi SiC o ka substrate Graphite no nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe maikaʻi a me ke kū'ē i ka lewa oxidizing.
Hoʻohana ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.
Nā hiʻohiʻona:
· ʻOi loa ka Thermal Shock Resistance
· Kūleʻa haʻalulu kino maikaʻi
· Kūʻē Kemika maikaʻi loa
· Maʻemaʻe Kiʻekiʻe
· Loaʻa ma ke ʻano paʻakikī
· Hoʻohana ma lalo o ka Oxidizing Atmosphere
Nā ʻano maʻamau o ka Material Graphite Base:
ʻIke ʻia ka mānoanoa: | 1.85 g/cm3 |
Ke kū'ē uila: | 11 μΩm |
ʻO ke koʻikoʻi ʻoluʻolu: | 49 MPa (500kgf/cm2) |
Paʻa Paʻa: | 58 |
lehu: | <5ppm |
ʻO ka wela wela: | 116 W/mK (100 kcal/mhr- ℃) |
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