2022 kiʻekiʻe MOCVD Susceptor Kūʻai pūnaewele ma Kina, Sic Graphite epitaxy susceptors,
Nā papa kākoʻo graphite, Nā mea kākoʻo graphite, Nā mea kākoʻo graphite no SiC Epitaxy, Nā mea kākoʻo graphite no Silicon, ʻO nā mea hoʻopiʻi graphite me ka uhi kalapona silika, GRAPHITE TOOLS I SEMICONDUCTOR Graphite Trays Graphite Wafer Susceptors HIGH PURITY GRAPHITE TOOLS Opto-electronics, nā paepae ukali no ka MOCVD, ʻO nā paepae ukali graphite i uhi ʻia ʻo SiC no MOCVD,
ʻO nā pōmaikaʻi kūikawā o kā mākou mau mea hoʻopili graphite i uhi ʻia ʻo SiC me ka maʻemaʻe kiʻekiʻe loa, ka uhi homogenous a me ke ola lawelawe maikaʻi loa. Loaʻa iā lākou ke kūpaʻa kemika kiʻekiʻe a me nā waiwai paʻa wela.
ʻO ka uhi SiC o ka substrate Graphite no nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe maikaʻi a me ke kū'ē i ka lewa oxidizing.
Hoʻohana ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.
Nā hiʻohiʻona:
· ʻOi loa ka Thermal Shock Resistance
· Kūleʻa haʻalulu kino maikaʻi
· Kūʻē Kemika maikaʻi loa
· Maʻemaʻe Kiʻekiʻe
· Loaʻa ma ke ʻano paʻakikī
· Hoʻohana ma lalo o ka Oxidizing Atmosphere
Nā ʻano maʻamau o ka Material Graphite Base:
ʻIke ʻia ka mānoanoa: | 1.85 g/cm3 |
Ke kū'ē uila: | 11 μΩm |
ʻO ke koʻikoʻi ʻoluʻolu: | 49 MPa (500kgf/cm2) |
Paʻa Paʻa: | 58 |
lehu: | <5ppm |
ʻO ka wela wela: | 116 W/mK (100 kcal/mhr- ℃) |
Hāʻawi ke kalapona i nā mea hoʻopili a me nā ʻāpana graphite no nā reactors epitaxy i kēia manawa. Loaʻa i kā mākou kōpili nā mea hoʻopili pahu no nā ʻāpana noi a me nā LPE, nā ʻāpana pancake no LPE, CSD, a me Gemini, a me nā mea hoʻohana hoʻokahi-wafer no nā ʻāpana noi a me ASM. hāʻawi i ka hoʻolālā maikaʻi loa no kāu noi.