Isikebhe esine-silicon carbide Sic crystal / wafer

Incazelo emfushane:

Isikebhe sethu i-Sintered Silicon Carbide (SiC) Crystal/Wafer Boat yakhelwe ukunemba ekukhiqizeni ama-semiconductor. Ngokuzinza okushisayo okukhethekile, ukumelana namakhemikhali, namandla emishini, lesi sikebhe siqinisekisa ukuthuthwa okuphephile nokuphumelelayo kwamakristalu namawafa ngezinqubo ezishisa kakhulu.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

The SinteredI-Silicon Carbide (SiC)Ikristalu/Isikebhe Esilucwecweyakhelwe izidingo eziqinile zezimboni ze-semiconductor kanye ne-microelectronics. Inikeza inkundla evikelekile yokuphatha amakristalu e-silicon nama-wafers ngesikhathi sokucutshungulwa kwezinga lokushisa eliphezulu, iqinisekisa ubuqotho nobumsulwa bawo kugcinwa kulo lonke.

Izici Eziyinhloko

  1. Ukuzinza Okuvelele Okushisayo: Iyakwazi ukubekezelela amazinga okushisa afika ku-1600°C, ilungele izinqubo ezidinga ukulawulwa okunembayo kwe-thermal.
  2. I-Superior Chemical Resistance: Ingazweli kumakhemikhali namagesi amaningi agqwalayo, ihlinzeka ukuqina ezindaweni zokucubungula ezinokhahlo.
  3. Amandla Mechanical Aqinile: Igcina ubuqotho besakhiwo ngaphansi kwengcindezi ephezulu, inciphisa amathuba okonakala noma ukuphuka.
  4. Ukunwetshwa Okuncane Okushisayo: Idizayinelwe ukunciphisa ubungozi bokushaqeka okushisayo nokuqhekeka, enikeza ukusebenza okuthembekile ngokusetshenziswa okunwetshiwe.
  5. Precision Manufacturing: Iklanywe ngokunemba okuphezulu ukuze ihlangabezane nezidingo ezithile zenqubo futhi ifake amasayizi ahlukahlukene ekristalu nama-wafer.

Izinhlelo zokusebenza

• Ukucutshungulwa kwe-wafer ye-semiconductor

• Ukukhiqizwa kwe-LED

• Ukukhiqizwa kwamaseli e-Photovoltaic

• Izinhlelo zeChemical vapor deposition (CVD).

• Ucwaningo nokuthuthukiswa kwesayensi yezinto ezibonakalayo

烧结碳化硅物理特性

Izici ezingokomzimba zeSinteredSiliconCarbide

性质 / Impahla

典型数值 / Inani Elijwayelekile

化学成分 / AmakhemikhaliUkwakheka

SiC>95%, Si<5%

体积密度 / Ukuminyana kwenqwaba

>3.07 g/cm³

显气孔率/ I-porosity ebonakalayo

I-porosity ebonakalayo

<0.1%

常温抗弯强度/ I-Modulus yokuphuka ku-20℃

270 MPa

高温抗弯强度/ I-Modulus yokuphuka ku-1200℃

290I-MPa

硬度/ Ukuqina ku-20℃

2400 Kg/mm²

断裂韧性/ Ukuqina kokuphuka ku-20%

3.3MPa · m1/2

导热系数/ I-Thermal Conductivity ku-1200℃

45w/m .K

热膨胀系数/ Ukunwetshwa kwe-Thermal ku-20-1200℃

4.51 ×10-6/℃

最高工作温度/ Izinga lokushisa eliphezulu

1400 ℃

热震稳定性/ Ukumelana nokushaqeka okushisayo ku-1200 ℃

Kuhle

Kungani Khetha Isikebhe Sethu Se-Sintered Silicon Carbide (SiC) Crystal/Wafer?

Ukukhetha i-SiC Crystal/Wafer Boat yethu kusho ukukhetha ukwethembeka, ukusebenza kahle, nokuphila isikhathi eside. Isikebhe ngasinye sithatha izinyathelo eziqinile zokulawula ikhwalithi ukuze siqinisekise ukuthi sihlangabezana namazinga aphezulu embonini. Lo mkhiqizo awugcini nje ngokuthuthukisa ukuphepha nokukhiqiza kwenqubo yakho yokukhiqiza kodwa futhi uqinisekisa ikhwalithi engaguquki yamakristalu akho e-silicon namawafa. Ngesikebhe sethu se-SiC Crystal/Wafer, ungathembela kusixazululo esisekela ukusebenza kahle kwakho.

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