Isikebhe esine-wafer esihlangene

Isithombe esifakiwe se-Wafer Wafer Ehambisanayo

Incazelo emfushane:

I-Contiguous Wafer Boat evela kwa-vet-china yakhelwe ukuphatha kahle i-wafer ekukhiqizeni i-semiconductor. Njengoba iklanywe ngokunemba, isixazululo se-vet-china siqinisekisa ukuzinza okushisayo nokumelana namakhemikhali, sithuthukisa izinqubo zokukhiqiza kuyilapho sinciphisa umonakalo futhi sithuthukisa ukuphuma.

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-vet-china yethula isikebhe sesimanjemanje i-Contiguous Wafer Boat esakhelwe isizukulwane esilandelayo sokukhiqiza i-semiconductor. Lesi sikebhe esiklanywe ngobunyoninco sinikeza ukunemba okungenakuqhathaniswa ekuphathweni kwe-wafer, ukuqinisekisa ukusebenza okungenamthungo futhi kunciphisa kakhulu ubungozi bokulimala ngesikhathi sokucubungula.

Yakhelwe ngezinto ezisezingeni eliphezulu, i-Contiguous Wafer Boat inokuzinza okuhle kakhulu okushisayo kanye nokumelana namakhemikhali okuhlukile, okuyenza ifaneleke endaweni enezinga eliphezulu lokushisa kanye nezindawo zamakhemikhali ezinokhahlo. Idizayini yayo emisha iqinisekisa ukuthi ama-wafers agcinwe ngokuvikelekile futhi aqondaniswe ngokuphelele, athuthukisa ukusebenza kahle nokwandisa ukusebenza kahle kokukhiqiza.

Lesi sikebhe se-wafer esisezingeni eliphakeme siklanyelwe ukuhlangabezana nezidingo ezidingekayo zendwangu yesimanje ye-semiconductor, esekela osayizi abahlukahlukene be-wafer kanye nokucushwa. Ngokuhlanganisa i-Contiguous Wafer Boat evela kwa-vet-china emgqeni wakho wokukhiqiza, ungalindela ukusebenza okuthuthukisiwe, isikhathi sokuphumula esincishisiwe, kanye namazinga esivuno anyukile.

Izwa umehluko ngokuzibophezela kwe-vet-china kukhwalithi nokuqanjwa kabusha, ukuletha imikhiqizo ephusha imingcele yokukhiqiza i-semiconductor. Khetha i-Contiguous Wafer Boat futhi ukhuphule amandla akho okucubungula ama-wafer abe phezulu.

Izakhiwo ze-silicon carbide eyenziwe kabusha

I-recrystallized silicon carbide (R-SiC) iyinto esebenza kahle kakhulu enobulukhuni okwesibili kunedayimane, eyakhiwe ezingeni lokushisa eliphezulu elingaphezu kuka-2000 ℃. Igcina izakhiwo eziningi ezinhle kakhulu ze-SiC, njengamandla okushisa aphezulu, ukumelana nokugqwala okuqinile, ukumelana ne-oxidation okuhle kakhulu, ukumelana nokushaqeka okuhle kokushisayo nokunye.

● Izakhiwo ezinhle kakhulu zemishini. I-silicon carbide eyenziwe kabusha inamandla aphakeme nokuqina kune-carbon fibre, ukumelana nomthelela omkhulu, ingadlala ukusebenza kahle ezindaweni ezishisa kakhulu zokushisa, ingadlala ukusebenza okungcono kokumelana nezimo ezihlukahlukene. Ngaphezu kwalokho, ibuye ibe nokuguquguquka okuhle futhi ayilimazi kalula ukwelula nokugoba, okuthuthukisa kakhulu ukusebenza kwayo.

● Ukumelana nokugqwala okuphezulu. I-silicon carbide eyenziwe kabusha inokumelana nokugqwala okuphezulu emithonjeni ehlukahlukene, ingavimbela ukuguguleka kwemithombo yezindaba egqwalayo, ingagcina izakhiwo zayo zemishini isikhathi eside, inokunamathela okuqinile, ukuze ibe nempilo ende yenkonzo. Ngaphezu kwalokho, ibuye ibe nokuzinza okuhle kokushisa, ingakwazi ukuzivumelanisa nohlu oluthile lwezinguquko zokushisa, ithuthukise umphumela wayo wokufaka isicelo.

● I-Sintering ayinciphi. Ngenxa yokuthi inqubo ye-sintering ayinciphisi, akukho ukucindezeleka okuyinsalela okuzobangela ukuwohloka noma ukuqhekeka komkhiqizo, futhi izingxenye ezinobunjwa obuyinkimbinkimbi nokunemba okuphezulu zingalungiswa.

重结晶碳化硅物理特性 Izakhiwo ezibonakalayo ze-Recrystallized Silicon Carbide
性质 / Impahla	典型数值 / Inani Elijwayelekile
使用温度/ Izinga lokushisa lokusebenza (°C)	1600°C (nomoya-mpilo), 1700°C (ukunciphisa imvelo)
I-SiC含量/ Okuqukethwe kwe-SiC	> 99.96%
自由Si含量/ Mahhala Si okuqukethwe	< 0.1%
体积密度/Ukuminyana ngobuningi	2.60-2.70 g/cm³
气孔率/ I-porosity ebonakalayo	< 16%
抗压强度/ Amandla okucindezela	> 600I-MPa
常温抗弯强度/Amandla okugoba abandayo	80-90 MPa (20°C)
高温抗弯强度Amandla okugoba ashisayo	90-100 MPa (1400°C)
热膨胀系数/ Ukunwetshwa kwe-Thermal @1500°C	4.70 10^-6/°C
导热系数/I-Thermal conductivity @1200°C	23W/m•K
杨氏模量/ Imoduli ye-elastic	240 GPA
抗热震性/ Ukumelana nokushaqeka okushisayo	Kuhle ngokwedlulele

I-VET Energy yiyona iumkhiqizi wangempela wemikhiqizo eyenziwe ngokwezifiso ye-graphite ne-silicon carbide ene-CVD coating,angahlinzekaezihlukahlukeneizingxenye ezenziwe ngokwezifiso ze-semiconductor kanye nemboni ye-photovoltaic. OIthimba le-ur lochwepheshe livela ezikhungweni eziphezulu zocwaningo lwasekhaya, linganikeza izixazululo zempahla echwepheshilekwakho.

Siyaqhubeka nokuthuthukisa izinqubo ezithuthukile ukuze sinikeze izinto ezithuthuke kakhulu,futhibenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kokumboza ne-substrate kuqine futhi kungabi lula ukuhlukaniswa.

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo ze-CVD SiCenamathela
性质 / Impahla	典型数值 / Inani Elijwayelekile
晶体结构 / Isakhiwo seCrystal	I-FCC β isigaba多晶，主要為（111）取向
密度 / Ukuminyana	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Uhlamvu SiZe	2 ~ 10μm
纯度 / Ukuhlanzeka Kwamakhemikhali	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / I-Sublimation Temperature	2700 ℃
抗弯强度 / Amandla Aguquguqukayo	415 MPa RT 4-iphoyinti
杨氏模量 / I-Modulus Encane	430 Gpa 4pt ukugoba, 1300℃
导热系数 / ThermalI-Conductivity	300Wm^-1·K^-1
热膨胀系数 / Ukwandiswa Kokushisa (CTE)	4.5×10^-6K^-1