I-SiC embozwe nge-Graphite substrate ye-Semiconductor, Amathreyi e-Graphite, ama-Sic Graphite epitaxy susceptors

Incazelo emfushane:

Indawo Yomsuka:E-Zhejiang, China (Mainland)

Inombolo Yemodeli:Isikebhe3004

Ukwakhiwa Kwekhemikhali:I-graphite ehlanganiswe ne-SiC

Amandla e-Flexural:470Mpa

I-Thermal conductivity:300 W/mK

Ikhwalithi:Iphelele

Umsebenzi:I-CVD-SiC

Isicelo:I-Semiconductor / Photovoltaic

Ukuminyana:3.21 g/cc

Ukunwetshwa kwe-thermal:4 10-6/K

Umlotha: <5ppm

Isampula:Iyatholakala

Ikhodi ye-HS:6903100000

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-SiC embozwe nge-Graphite substrate ye-Semiconductor,Amathreyi eGraphite，Sic Graphiteama-epitaxy susceptors,
Ikhabhoni ihlinzeka ngama-susceptors, I-EPITAXY NE-MOCVD, ama-epitaxy susceptors, Amathreyi eGraphite, I-Wafer Susceptors,

I-CVD-SiC enamathela inezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana ne-oxidation, ukuhlanzeka okuphezulu, ukumelana ne-asidi & alkali kanye ne-reagent ephilayo, enezakhiwo ezinzile ngokomzimba namakhemikhali.

Uma kuqhathaniswa ne-high-purity graphite materials, i-graphite iqala ukufaka i-oxidize ku-400C, okuzobangela ukulahlekelwa kwempushana ngenxa ye-oxidation, okuholela ekungcoleni kwemvelo kumadivayisi we-peripheral kanye nama-vacuum chamber, futhi kwandise ukungcola kwemvelo ehlanzekile.

Kodwa-ke, ukufakwa kwe-SiC kungagcina ukuzinza ngokomzimba namakhemikhali kumadigri ayi-1600, Kusetshenziswa kabanzi embonini yesimanje, ikakhulukazi embonini ye-semiconductor.

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC. I-SIC eyakhiwe ihlanganiswe ngokuqinile nesisekelo se-graphite, inikeze isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite compact, i-Porosity-free, ukumelana nokushisa okuphezulu, ukumelana nokugqwala kanye nokumelana ne-oxidation.

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1700 C.

2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:

I-SiC-CVD
Ukuminyana	(g/cc)	3.21
Amandla e-Flexural	(Mpa)	470
Ukunwetshwa kwe-thermal	(10-6/K)	4
I-Thermal conductivity	(W/mK)	300

Ikhono Lokuhlinzeka:

10000 Ucezu/Izingcezu Ngenyanga
Ukupakishwa Nokulethwa:
Ukupakisha:Ukupakisha Okujwayelekile & Okuqinile
Isikhwama sePoly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo: