I-SiC embozwe nge-Graphite substrate ye-Semiconductor, i-Silicon carbide coating, i-MOCVD Susceptor

Incazelo emfushane:

Ukufakwa kwe-SiC ye-Graphite substrate yezinhlelo zokusebenza ze-Semiconductor kukhiqiza ingxenye enobumsulwa obuphakeme kanye nokumelana nomoya we-oxidizing. I-CVD SiC noma i-CVI SiC isetshenziswa kuGraphite yezingxenye zokuklama ezilula noma eziyinkimbinkimbi. Ukumboza kungasetshenziswa ngobukhulu obuhlukahlukene kanye nezingxenye ezinkulu kakhulu.

Indawo Yomsuka:E-Zhejiang, China (Mainland)

Inombolo Yemodeli:Inombolo Yemodeli:

Ukwakhiwa Kwekhemikhali:I-graphite ehlanganiswe ne-SiC

Amandla e-Flexural:470Mpa

I-Thermal conductivity:300 W/mK

Ikhwalithi:Iphelele

Umsebenzi:I-CVD-SiC

Isicelo:I-Semiconductor / Photovoltaic

Ukuminyana:3.21 g/cc

Ukunwetshwa kwe-thermal:4 10-6/K

Umlotha: <5ppm

Isampula:Iyatholakala

Ikhodi ye-HS:6903100000

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-SiC coating coating ofI-graphite substrate yeSemiconductor, i-silicon carbide coating,I-MOCVD Susceptor,
I-Graphite substrate, I-graphite substrate yeSemiconductor, I-MOCVD Susceptor, I-Silicon Carbide Coating,

Izinzuzo ezikhethekile ze-SiC-coated graphite susceptors zihlanganisa ukuhlanzeka okuphezulu kakhulu, ukunamathela okufana nempilo yesevisi enhle kakhulu. Futhi banokuphikiswa okuphezulu kwamakhemikhali kanye nezakhiwo zokuzinza kokushisa.

Ukufakwa kwe-SiCI-graphite substrate yeSemiconductorizinhlelo zokusebenza zikhiqiza ingxenye enobumsulwa obuphakeme nokumelana nomkhathi we-oxidizing.
I-CVD SiC noma i-CVI SiC isetshenziswa kuGraphite yezingxenye zokuklama ezilula noma eziyinkimbinkimbi. Ukumboza kungasetshenziswa ngobukhulu obuhlukahlukene kanye nezingxenye ezinkulu kakhulu.

I-SiC coating/coated MOCVD Susceptor

Izici:
· I-Thermal Shock Resistance enhle kakhulu
· Ukumelana Nokushaqeka Okuhle Kakhulu Komzimba
· Excellent Chemical Resistance
· Super High Purity
· Ukutholakala kokuthi I-Complex Shape
· Isebenziseka ngaphansi kwe-Oxidizing Atmosphere

Izici Ezijwayelekile Ze-Base Graphite Material:

Ukuminyana Okubonakalayo:	1.85 g/cm3
Ukungazweli Kagesi:	11 μΩm
I-Flexural Strenth:	49 MPa (500kgf/cm2)
Ukuqina Kwasogwini:	58
Umlotha:	<5ppm
I-Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

Ikhabhoni ihlinzeka ngezinto ezibamba ukushisa nezingxenye ze-graphite kuzo zonke iziphendulela zamanje ze-epitaxy. Iphothifoliyo yethu ihlanganisa izinto zokususa imigqomo zamayunithi afakiwe kanye ne-LPE, okokufaka amapancake e-LPE, i-CSD, kanye namayunithi e-Gemini, kanye nama-wafer-wafer eyodwa amayunithi asetshenziswayo kanye ne-ASM. inikeza idizayini efanele yohlelo lwakho lokusebenza.

I-SiC coating/coated MOCVD Susceptor