I-Epitaxial Epi Graphite Barrel Susceptor

I-Epitaxial Epi Graphite Barrel Susceptor

I-Epitaxial Epi Graphite Barrel Susceptoriyithuluzi eliklanywe ngokukhethekile lokusekela nokushisisa elisetshenziselwa ukubamba nokushisa ama-semiconductor substrates phakathi nezinqubo zokukhiqiza ezifana nezinqubo ze-Deposition noma ze-Epitaxy.

Isakhiwo sayo sihlanganisa ngokuvamile okumise okwesilinda noma okumise okwe-barrel, indawo engaphezulu ifaka amaphakethe amaningi noma izinkundla zokubeka ama-wafers, ingaba idizayini eqinile noma engenalutho, kuye ngendlela yokushisisa.

Imisebenzi esemqoka ye-epitaxial barrel susceptor:

-Ukusekelwa kwe-Substrate: ibamba ngokuvikelekile ama-wafers amaningi we-semiconductor;
-Umthombo wokushisa: inikeza amazinga okushisa aphezulu adingekayo ekukhuleni ngokufudumeza;
-Ukushisa okufanayo: kuqinisekisa ukushisa okufanayo kwama-substrates;
-Ukuzungezisa: kuvame ukuzungezisa ngesikhathi sokukhula ukuze kuthuthukiswe izinga lokushisa kanye nokufana kokusabalalisa igesi.

Umgomo wokusebenza we-Epi graphite barrel susceptor:
- Ku-epitaxial reactor, i-barrel susceptor ishiselwa ezingeni lokushisa elidingekayo (imvamisa engu-1000℃-1200℃ ye-silicon epitaxy);
-I-barrel susceptor iyajikeleza ukuze kuqinisekiswe ukusabalalisa okufanayo kwezinga lokushisa nokugeleza kwegesi;
-Amagesi okusabela abola emazingeni okushisa aphezulu, enze izendlalelo ze-epitaxial endaweni engaphansi.

Izicelo:
-Ngokuyinhloko isetshenziselwa ukukhula kwe-silicon epitaxial
-Isebenza futhi ku-epitaxy yezinye izinto ze-semiconductor ezifana ne-GaAs, i-InP, njll.

I-VET Energy isebenzisa i-graphite ehlanzekile kakhulu ene-CVD-SiC coating ukuthuthukisa ukuzinza kwamakhemikhali:

Izinzuzo ze-VET Energy Epitaxial Epi Graphite Barrel Susceptor:

-High lokushisa ukuzinza;
-Kuhle ukufana okushisayo;
-Ingakwazi ukucubungula ama-substrates amaningi ngesikhathi esisodwa, ithuthukise ukusebenza kahle kokukhiqiza;
-Ayisebenzi ngamakhemikhali, igcina indawo yokukhula ehlanzekile.