I-Silicon Carbide Coated Carrier Tray emelana nokugqwala

I-Silicon Carbide Coated Carrier Tray Evikela ukubola Isithombe Esifakiwe

Incazelo emfushane:

I-VET Energy Silicon Carbide Coated Carrier Tray iwumkhiqizo osebenza kahle kakhulu oklanyelwe ukunikeza ukusebenza okungaguquki nokuthembekile esikhathini eside. Inokumelana nokushisa okuhle kakhulu nokufana okushisayo, ukuhlanzeka okuphezulu, ukumelana nokuguguleka, okuyenza ibe yisixazululo esiphelele sezinhlelo zokusebenza zokucubungula ama-wafer.

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ithreyi yokuthwala i-silicon carbideis a ukhiyeingxenye esetshenziswa ezinqubweni ezihlukahlukene zokukhiqiza ama-semiconductor.Sisebenzisa ubuchwepheshe bethu obunelungelo lobunikazi ukwenza isithwali se-silicon carbide ngasoubumsulwa obukhulu kakhulu,kuhleenamathelaukufanakanye nempilo yesevisi enhle kakhulu, kanye neukumelana namakhemikhali aphezulu kanye nezakhiwo zokuzinza ezishisayo.

I-VET Energy yiyona iumkhiqizi wangempela wemikhiqizo eyenziwe ngokwezifiso ye-graphite ne-silicon carbide ene-CVD coating,angahlinzekaezihlukahlukeneizingxenye ezenziwe ngokwezifiso ze-semiconductor kanye nemboni ye-photovoltaic. OIthimba le-ur lochwepheshe livela ezikhungweni eziphezulu zocwaningo lwasekhaya, lingahlinzeka ngezixazululo zezinto ezibonakalayo ezinobuchwepheshekwakho.

Siyaqhubeka nokuthuthukisa izinqubo ezithuthukile ukuze sinikeze izinto ezithuthuke kakhulu,futhibenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukubopha phakathi kokumboza ne-substrate kuqine futhi kungabi lula ukuhlukaniswa.

Fukudla kwemikhiqizo yethu:

1. Ukumelana nokushisa okuphezulu kwe-oxidation kufika ku-1700℃.
2. Ukuhlanzeka okuphezulu kanyeukufana okushisayo
3. Ukumelana nokugqwala okuhle kakhulu: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
4. Ukuqina okuphezulu, indawo ehlangene, izinhlayiya ezinhle.
5. Impilo yesevisi ende futhi ihlala isikhathi eside

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo ze-CVD SiCenamathela
性质 / Impahla	典型数值 / Inani Elijwayelekile
晶体结构 / Isakhiwo seCrystal	I-FCC β isigaba多晶，主要為（111）取向
密度 / Ukuminyana	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Uhlamvu SiZe	2 ~ 10μm
纯度 / Ukuhlanzeka Kwamakhemikhali	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / I-Sublimation Temperature	2700 ℃
抗弯强度 / Amandla Aguquguqukayo	415 MPa RT 4-iphoyinti
杨氏模量 / I-Modulus Encane	430 Gpa 4pt ukugoba, 1300℃
导热系数 / ThermalI-Conductivity	300Wm^-1·K^-1
热膨胀系数 / Ukwandiswa Kokushisa (CTE)	4.5×10^-6K^-1