i-gallium arsenide-phosphide epitaxial

gallium arsenide-phosphide epitaxial Isithombe esifakiwe

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Izakhiwo ze-Gallium arsenide-phosphide epitaxial ,ezifana nezakhiwo ezikhiqiziwe zohlobo lwe-ASP ye-substrate (ET0.032.512TU), ye-. ukwakhiwa kwamakristalu abomvu e-LED.

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Izakhiwo ze-Gallium arsenide-phosphide epitaxial ,ezifana nezakhiwo ezikhiqiziwe zohlobo lwe-ASP ye-substrate (ET0.032.512TU), ye-. ukwakhiwa kwamakristalu abomvu e-LED.

Ipharamitha yobuchwepheshe eyisisekelo
ku-gallium arsenide-phosphide izakhiwo

1,SubstrateGaAs
a. Uhlobo lwe-Conductivity	electronic
b. Ukumelana, ohm-cm	0,008
c. I-Crystal-latticeorientation	(100)
d. Ukungaqondi kahle kobuso	(1−3)°

2. Isendlalelo se-Epitaxial GaAs1-х Pх
a. Uhlobo lwe-Conductivity	electronic
b. Okuqukethwe kwe-phosphorus kungqimba yoshintsho	kusuka ku-х = 0 kuya ku-х ≈ 0,4
c. Okuqukethwe kwe-phosphorus kungqimba yokwakheka okungaguquki	х ≈ 0,4
d. Ukugxila kwenkampani yenethiwekhi, сm3	(0,2−3,0)·1017
e. Ubude begagasi kubukhulu be-photoluminescence spectrum, nm	645−673 nm
f. Ubude begagasi ngobuningi be-spectrum ye-electroluminescence	650−675 nm
g. Ukuqina kwesendlalelo esiqhubekayo, i-micron	Okungenani 8nm
h. Ubukhulu (ingqikithi), i-micron	Okungenani ama-nm angama-30

3 Ipuleti eline-epitaxial layer
a. Ukuchezuka, i-micron	Okungenani i-100 um
b. Ubukhulu, micron	360−600 um
c. Isikwelesentimitha	Okungenani 6 cm2
d. Ukuqina okucacile okukhanyayo (ngemuva kwe-diffusionZn), cd/amp	Okungenani 0,05 cd/amp