Rhoqo ijolise kubathengi, kwaye yeyona nto sijolise kuyo ukuba ingabi ngoyena mntu uthembekileyo, othembekileyo nothembekileyo, kodwa ube liqabane kubathengi bethu ngeXabiso eliPhantsi kakhulu eTshayina 1200c yePlasma eyoNgezelelweyo yokuBeka uMphunga weMichiza.PecvdVacuum Funace, Ukufunda ngakumbi malunga nento esinokukwenzela yona, qhagamshelana nathi nangaliphi na ixesha. Sijonge phambili ekusekeni ubudlelwane beshishini obulungileyo kunye nexesha elide kunye nawe.
Ihlala ijolise kubathengi, kwaye yeyona nto sijolise kuyo ukuba ingabi ngoyena mntu uthembekileyo, othembekileyo nothembekileyo, kodwa ube liqabane kubathengi bethu.I-Plasma yaseTshayina eyoNgezelelweyo yokuBekwa koMphunga weMichiza, Pecvd, Izixhobo zethu eziphambili, ulawulo olubalaseleyo lomgangatho, uphando kunye nobuchule bophuhliso zenza ixabiso lethu lihle. Ixabiso esilinikezelayo lisenokungabi lelona lisezantsi, kodwa siqinisekisa ukuba liyakhuphisana ngokupheleleyo! Wamkelekile ukuba uqhagamshelane nathi ngoko nangoko kubudlelwane ishishini elizayo kunye nempumelelo mutual!
Iimbumba zekhabhoni / ikhabhoni(emva koku kubhekiselwa kuyo ngokuthi “C / C okanye CFC”) luhlobo lwezinto ezidibeneyo ezisekelwe kwikhabhoni kwaye zomelezwe yi-carbon fiber kunye neemveliso zayo (i-carbon fiber preform). Inayo zombini inertia yekhabhoni kunye namandla aphezulu e-carbon fiber. Ineempawu ezilungileyo zoomatshini, ukumelana nobushushu, ukuxhathisa ukugqwala, ukudambisa i-friction kunye ne-thermal kunye neempawu zombane.
CVD-SiCI-coating ineempawu zesakhiwo esifanayo, i-compact material, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.
Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.
Nangona kunjalo, ukugquma kwe-SiC kunokugcina uzinzo ngokwasemzimbeni kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa kakhulu kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.
Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC. I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.
Iimpawu eziphambili:
1. Ukumelana nobushushu obuphezulu be-oxidation:
Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.
2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.
3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.
IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:
| SiC-CVD | ||
| Ukuxinana | (g/cc)
| 3.21 |
| Amandla e-Flexural | (Mpa)
| 470 |
| Ukwandiswa kweThermal | (10-6/K) | 4
|
| I-Thermal conductivity | (W/mK) | 300
|
