SiC Sintered Silicon Carbide Ceramic Bushing

Inkcazelo emfutshane:

Ukubunjwa kwemichiza: iSilicon Carbide

Ukuqina:≥110 HS

Ubuninzi: 3.10-3.15 g/cm3

Ukugoba Amandla:> 350MPa

I-Thermal conductivity:>120

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

ISintered Silicon Carbide Ceramic Bushing

I-silicon carbide engenaxinzelelo (SSIC)iveliswa kusetyenziswa umgubo we-SiC ocolekileyo kakhulu oqulethe izongezo ze-sintering. Icutshungulwa kusetyenziswa iindlela zokubumba eziqhelekileyo kwezinye iiseramics kwaye i-sintered kwi-2,000 ukuya kwi-2,200 ° C kwi-atmosphere ye-inert yegesi.Kwakunye neenguqulelo ezicokisekileyo, ezinobukhulu obuziinkozo <5 um, iinguqulelo ze-coarse-grained kunye nobukhulu beenkozo ukuya kwi-1.5. mm ziyafumaneka.

I-SSIC yohlulwa ngamandla aphezulu ahlala phantse ngokuthe rhoqo ukuya kumaqondo obushushu aphezulu kakhulu (malunga ne-1,600° C), egcina loo mandla ixesha elide!

Iinzuzo zemveliso:

Ukumelana ne-oxidation yobushushu obuphezulu

Uxhathiso olugqwesileyo lweCorrosion

Ukuxhathisa okulungileyo kweAbrasion

I-coefficient ephezulu yokushisa ukushisa
Ukuzithambisa, ukuxinana okuphantsi
Ukuqina okuphezulu
Uyilo olulungiselelweyo.

Iimpawu zobugcisa:

Izinto	Iyunithi	Idatha
Ukuqina	HS	≥110
Inqanaba le-Porosity	%	<0.3
Ukuxinana	g/cm3	3.10-3.15
Ukucinezela	MPa	>2200
Ukomelela Kweqhekeza	MPa	>350
I-Coefficient yokwandiswa	10/°C	4.0
Umxholo weSic	%	≥99
I-Thermal conductivity	W/mk	>120
Imodyuli ye-elastic	GPA	≥400
Ubushushu	°C	1380