Kwiminyaka embalwa edlulileyo, inkampani yethu ithathe kwaye yetyise itekhnoloji ephezulu ekhaya nakwamanye amazwe. Ngeli xesha, inkampani yethu inentonga yeqela leengcali ezizinikele kuphuhliso lweI-SiC igqunywe nge-Graphite substrate yeSemiconductorI-silicon ye-carbide yokugquma,I-MOCVD Susceptor, Ugxininiso olukhethekileyo ekupakishweni kwezinto ezithengiswayo ukuphepha nawuphi na umonakalo ngexesha lokuthutha,Ingqwalasela eneenkcukacha kwiingxelo ezixhamlayo kunye neengcebiso zabaxumi bethu abahloniphekileyo.
Kwiminyaka embalwa edlulileyo, inkampani yethu ithathe kwaye yetyise itekhnoloji ephezulu ekhaya nakwamanye amazwe. Ngeli xesha, inkampani yethu inentonga yeqela leengcali ezizinikele kuphuhliso lweI-MOCVD Susceptor, I-SiC igqunywe nge-Graphite substrate yeSemiconductor, I-Silicon Carbide Coating, Njengomvelisi onamava sikwamkele iodolo elungiselelweyo kwaye singayenza ifane nomfanekiso wakho okanye iisampulu yenkcazo. Eyona njongo yenkampani yethu kukuphila inkumbulo eyanelisayo kubo bonke abathengi, kunye nokuseka ubudlelwane beshishini bexesha elide kunye nabathengi kunye nabasebenzisi kwihlabathi liphela.

I-CVD-SiC yokwambathisa ineempawu zesakhiwo esifanayo, izinto ezihlangeneyo, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.

Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.

Nangona kunjalo, ukugquma kwe-SiC kunokugcina uzinzo ngokwasemzimbeni kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa kakhulu kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC. I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

Ubunakho bokubonelela:

10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela:

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