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I-SiC igqunywe nge-Graphite substrate yeSemiconductor, i-Silicon carbide coating, i-MOCVD Susceptor

I-SiC igqunywe nge-Graphite substrate ye-Semiconductor, i-Silicon carbide coating, i-MOCVD Susceptor Umfanekiso obonakalayo
  • I-SiC igqunywe nge-Graphite substrate yeSemiconductor, i-Silicon carbide coating, i-MOCVD Susceptor
  • I-SiC igqunywe nge-Graphite substrate yeSemiconductor, i-Silicon carbide coating, i-MOCVD Susceptor
  • I-SiC igqunywe nge-Graphite substrate yeSemiconductor, i-Silicon carbide coating, i-MOCVD Susceptor
  • I-SiC igqunywe nge-Graphite substrate yeSemiconductor, i-Silicon carbide coating, i-MOCVD Susceptor
  • I-SiC igqunywe nge-Graphite substrate yeSemiconductor, i-Silicon carbide coating, i-MOCVD Susceptor

Inkcazelo emfutshane:

Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing. I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye neendawo ezinkulu kakhulu.


  • Indawo yemvelaphi:E-Zhejiang, eTshayina (eMaphandleni)
  • Inombolo yoMfanekiso:Inombolo yoMfanekiso:
  • Ukuqulunqwa kwemichiza:I-SiC eqatywe igraphite
  • Amandla e-Flexural:470Mpa
  • I-Thermal conductivity:300 W/mK
  • Umgangatho:Igqibelele
  • Umsebenzi:CVD-SiC
  • Isicelo:Semiconductor / Photovoltaic
  • Ubuninzi:3.21 g/cc
  • Ukwandiswa kweThermal:4 10-6/K
  • Uthuthu: <5ppm
  • Isampulu:Iyafumaneka
  • Ikhowudi ye-HS:6903100000
    • Khuphela njengePDF

    Iinkcukacha zeMveliso

    Iithegi zeMveliso

    I-SiC igqunywe ngeI-Graphite substrate yeSemiconductorI-silicon ye-carbide yokugquma,I-MOCVD Susceptor,
    I-Graphite substrate yeSemiconductor, I-MOCVD Susceptor, I-Silicon Carbide Coating,

    Ingcaciso yeMveliso

    Ukufakwa kwe-SiC ye-Graphite substrate yezicelo ze-Semiconductor ivelisa inxalenye enobunyulu obuphezulu kunye nokumelana nomoya we-oxidizing.
    I-CVD SiC okanye i-CVI SiC isetyenziswa kwiGraphite yeendawo ezilula okanye ezintsonkothileyo zoyilo. Ukugquma kungasetyenziswa kubunzima obuhlukeneyo kunye neendawo ezinkulu kakhulu.

    I-SiC yokwaleka / i-MOCVD igqunywe Susceptor

    Iimbonakalo:
    · Okugqwesileyo kweThermal Shock Resistance
    · Okugqwesileyo koKuxhathisa ukothuka koMzimba
    · Ukumelana neMichiza okugqwesileyo
    · Ukucoceka okuphezulu okuphezulu
    · Ukufumaneka kobume obuntsonkothileyo
    · Isetyenziswa phantsi kwe-Oxidizing Atmosphere

     

    Iinkcazelo Ngeempawu zeSiseko seMathiriyeli yeGrafite:

    Uxinzelelo olubonakalayo: 1.85 g/cm3
    Ukuxhathisa koMbane: 11 μΩm
    Ukuqina kweFlexural: 49 MPa (500kgf/cm2)
    Ukuqina konxweme: 58
    Uthuthu: <5ppm
    I-Thermal Conductivity: 116 W/mK (100 kcal/mhr-℃)

    I-SiC yokwaleka / i-MOCVD igqunywe SusceptorI-SiC yokwaleka / i-MOCVD igqunywe SusceptorI-SiC yokwaleka / i-MOCVD igqunywe SusceptorI-SiC yokwaleka / i-MOCVD igqunywe Susceptor

    Iimveliso ezingakumbi

    I-SiC yokwaleka / i-MOCVD igqunywe Susceptor

    Ulwazi lweNkampani

    111

    Izixhobo zoMzi-mveliso

    222

    Indawo yokugcina impahla

    333

    Iziqinisekiso

    Iziqinisekiso22

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